Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon

Zinetulla Insepov, Isao Yamada

Research output: Contribution to journalConference article

Abstract

Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.

Original languageEnglish
Pages (from-to)J471-J476
JournalMaterials Research Society Symposium - Proceedings
Volume669
Publication statusPublished - Dec 1 2001
EventSi Front-end Processing - Physics and Technology of Dopant-Defect Interactions III - San Francisco, CA, United States
Duration: Apr 17 2001Apr 19 2001

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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