Abstract
Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.
| Original language | English |
|---|---|
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 669 |
| Publication status | Published - 2001 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon. / Insepov, Zinetulla; Yamada, Isao.
In: Materials Research Society Symposium - Proceedings, Vol. 669, 2001.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon
AU - Insepov, Zinetulla
AU - Yamada, Isao
PY - 2001
Y1 - 2001
N2 - Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.
AB - Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.
UR - http://www.scopus.com/inward/record.url?scp=0035556492&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035556492&partnerID=8YFLogxK
M3 - Article
VL - 669
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -