Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon

Zinetulla Insepov, Isao Yamada

Research output: Contribution to journalArticle

Abstract

Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume669
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

Silicon
Ion implantation
Molecular dynamics
implantation
computerized simulation
Annealing
annealing
Computer simulation
silicon
Chemical activation
molecular dynamics
Rapid thermal annealing
ion implantation
energy
activation
Monomers
Atoms
Ions
Substrates
monomers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon",
abstract = "Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.",
author = "Zinetulla Insepov and Isao Yamada",
year = "2001",
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journal = "Materials Research Society Symposium - Proceedings",
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T1 - Computer simulation of decaborane implantation into silicon, annealing and recrystallization of silicon

AU - Insepov, Zinetulla

AU - Yamada, Isao

PY - 2001

Y1 - 2001

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AB - Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.

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