Abstract
Molecular Dynamics (MD) and Activation-Relaxation Technique (ART) models of decaborane ion implantation into Si and following rapid thermal annealing (RTA) processes have been developed. The B and Si atomic positions for implantation of accelerated decaborane ions, with total energy 3.5-15 KeV, into Si substrate were obtained by MD simulation. The main difference between monomer and decaborane ion implantation with the same doses is the formation of a large amorphized area in a subsurface region for the decaborane case. The number of displaced Si atoms shows non-linear energy dependence at low impact energies. At higher energies of the investigated range of the decaborane energy range, however, a linear dependence is observed in accordance with the prediction of the Kinchin-Pease formula. A new method that incorporates Activation-Relaxation Technique (ART) with MD has been developed and used to study recrystallization of Si amorphized in the implantation process.
Original language | English |
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Pages (from-to) | J471-J476 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 669 |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
Event | Si Front-end Processing - Physics and Technology of Dopant-Defect Interactions III - San Francisco, CA, United States Duration: Apr 17 2001 → Apr 19 2001 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering