Computer simulation of surface modification with ion beams

Z. Insepov; A. Hassanein; D. Swenson; M. Terasawa

doi:10.1016/j.nimb.2005.07.061

Computer simulation of surface modification with ion beams

Z. Insepov, A. Hassanein, D. Swenson, M. Terasawa

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Abstract

Interactions of energetic ions with various solid targets including silicon and a few metal surfaces were studied by computer simulation and verified by experiment. Surface sputtering and modification for collisions of Ar_n (n ∼ 100) cluster ions, with kinetic energies of 12-54 eV/atom, and slow highly charged ions (HCI), with potential energies of 80-3500 eV, have been simulated. Various energy transfer mechanisms of the ion energy into the solid target, such as shock wave generation, hollow atom formation, Coulomb explosion, charge screening and neutralization were studied. Atomistic molecular dynamics (MD), as well as a phenomenological surface dynamics methods were employed and the results of the simulations were compared with the experimental data.

Original language	English
Pages (from-to)	496-500
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	241
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2005.07.061
Publication status	Published - Dec 1 2005

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Keywords

Extreme ultra-violet lithography
Gas cluster ion beam
Highly charged ions
Sputtering

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Cite this

Insepov, Z., Hassanein, A., Swenson, D., & Terasawa, M. (2005). Computer simulation of surface modification with ion beams. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 241(1-4), 496-500. https://doi.org/10.1016/j.nimb.2005.07.061

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T1 - Computer simulation of surface modification with ion beams

AU - Insepov, Z.

AU - Hassanein, A.

AU - Swenson, D.

AU - Terasawa, M.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Interactions of energetic ions with various solid targets including silicon and a few metal surfaces were studied by computer simulation and verified by experiment. Surface sputtering and modification for collisions of Arn (n ∼ 100) cluster ions, with kinetic energies of 12-54 eV/atom, and slow highly charged ions (HCI), with potential energies of 80-3500 eV, have been simulated. Various energy transfer mechanisms of the ion energy into the solid target, such as shock wave generation, hollow atom formation, Coulomb explosion, charge screening and neutralization were studied. Atomistic molecular dynamics (MD), as well as a phenomenological surface dynamics methods were employed and the results of the simulations were compared with the experimental data.

AB - Interactions of energetic ions with various solid targets including silicon and a few metal surfaces were studied by computer simulation and verified by experiment. Surface sputtering and modification for collisions of Arn (n ∼ 100) cluster ions, with kinetic energies of 12-54 eV/atom, and slow highly charged ions (HCI), with potential energies of 80-3500 eV, have been simulated. Various energy transfer mechanisms of the ion energy into the solid target, such as shock wave generation, hollow atom formation, Coulomb explosion, charge screening and neutralization were studied. Atomistic molecular dynamics (MD), as well as a phenomenological surface dynamics methods were employed and the results of the simulations were compared with the experimental data.

KW - Extreme ultra-violet lithography

KW - Gas cluster ion beam

KW - Highly charged ions

KW - Sputtering

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10.1016/j.nimb.2005.07.061