Computer simulation of surface modification with ion beams

Z. Insepov, A. Hassanein, D. Swenson, M. Terasawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Interactions of energetic ions with various solid targets including silicon and a few metal surfaces were studied by computer simulation and verified by experiment. Surface sputtering and modification for collisions of Arn (n ∼ 100) cluster ions, with kinetic energies of 12-54 eV/atom, and slow highly charged ions (HCI), with potential energies of 80-3500 eV, have been simulated. Various energy transfer mechanisms of the ion energy into the solid target, such as shock wave generation, hollow atom formation, Coulomb explosion, charge screening and neutralization were studied. Atomistic molecular dynamics (MD), as well as a phenomenological surface dynamics methods were employed and the results of the simulations were compared with the experimental data.

Original languageEnglish
Pages (from-to)496-500
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume241
Issue number1-4
DOIs
Publication statusPublished - Dec 1 2005
Externally publishedYes

Keywords

  • Extreme ultra-violet lithography
  • Gas cluster ion beam
  • Highly charged ions
  • Sputtering

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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