Conductance studies in a double-bend quantum structure

M. Hannan, R. W. Giannetta, R. Grundbacher, I. Adesida, J. Eom, V. Chandrasekhar

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.

Original languageEnglish
Pages (from-to)427-433
Number of pages7
JournalSuperlattices and Microstructures
Volume20
Issue number4
DOIs
Publication statusPublished - Jan 1 1996

Keywords

  • Conductance
  • Double-bend
  • GaAs/AlGaAs

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Hannan, M., Giannetta, R. W., Grundbacher, R., Adesida, I., Eom, J., & Chandrasekhar, V. (1996). Conductance studies in a double-bend quantum structure. Superlattices and Microstructures, 20(4), 427-433. https://doi.org/10.1006/spmi.1996.0099