Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

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The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.

Original languageEnglish
Article number211910
JournalApplied Physics Letters
Issue number21
Publication statusPublished - Dec 15 2006


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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