Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors

Liang Wang, Weifeng Zhao, Ilesanmi Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The characteristics of Ir on InAlAs and on InAlAsInGaAsInP high electron mobility transistor (HEMT) heterostructures were characterized. A maximum Schottky barrier height (B) of 825 meV was achieved for IrInAlAs after annealing at 400 °C. Transmission electron microscopy investigations confirmed that an amorphous layer (a layer) exists at the IrInAlAs interface at that temperature. Results indicate that enhancement of B is associated with the a layer, while beyond 400 °C, the decrease of B is due to the crystallization of the a layer and the formation of Ir As2. The enhancement of B for IrInAlAs and the slow diffusion of Ir in IrAlAs make it a superior thermally stable gate metal for InAlAsInGaAs HEMTs.

Original languageEnglish
Article number211910
JournalApplied Physics Letters
Volume89
Issue number21
DOIs
Publication statusPublished - 2006
Externally publishedYes

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high electron mobility transistors
augmentation
crystallization
transmission electron microscopy
annealing
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors. / Wang, Liang; Zhao, Weifeng; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 89, No. 21, 211910, 2006.

Research output: Contribution to journalArticle

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