Craters on silicon surfaces created by gas cluster ion impacts

L. P. Allen, Z. Insepov, D. B. Fenner, C. Santeufemio, W. Brooks, K. S. Jones, I. Yamada

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Atomic force microscopy (AFM) and high-resolution transmission electron microscope (HRTEM) cross section imaging of individual gas cluster ion impact craters on Si(100) and Si(111) substrate surfaces is examined. The comparison between 3 and 24 kV cluster impacts from Ar and O 2 gas sources is shown. Results for low fluence (10 10 ions/cm 2) 24 kV Ar individual cluster impacts onto a Si(100) and Si(111) substrate surfaces are compared with hybrid molecular dynamics (HMD) simulations. A HMD method is used for modeling impacts of Ar n (n=135, 225) clusters, with energies of 24-50 eV/atom, on Si(100) and Si(111) surfaces. On a Si(100), craters are nearly triangular in cross section, with the facets directed along the close-packed (111) planes. The Si(100) craters exhibit four-fold symmetry as imaged by cross-sectional HRTEM, and AFM top view, in agreement with modeling. In contrast, the shape of craters on a Si(111) shows a complicated six-pointed shape in the modeling, while AFM indicates three-fold symmetry of the impact. The lower energy 3 kV individual cluster impacts reveal the same crater shape in HRTEM cross section for both Ar and O 2 gas clusters, but with shallower crater depth than for the higher-energy impacts. The kinetics of the Ar and O 2 crater impacts may explain the successful use of higher-energy cluster impacts for etching material of higher initial surface roughness followed by the lower-energy impacts as an effective finishing step to achieve smoother surfaces.

Original languageEnglish
Pages (from-to)3671-3678
Number of pages8
JournalJournal of Applied Physics
Volume92
Issue number7
DOIs
Publication statusPublished - Oct 1 2002
Externally publishedYes

Fingerprint

ion impact
craters
silicon
gases
electron microscopes
atomic force microscopy
high resolution
cross sections
energy
molecular dynamics
symmetry
flat surfaces
surface roughness
fluence
etching
kinetics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Allen, L. P., Insepov, Z., Fenner, D. B., Santeufemio, C., Brooks, W., Jones, K. S., & Yamada, I. (2002). Craters on silicon surfaces created by gas cluster ion impacts. Journal of Applied Physics, 92(7), 3671-3678. https://doi.org/10.1063/1.1506422

Craters on silicon surfaces created by gas cluster ion impacts. / Allen, L. P.; Insepov, Z.; Fenner, D. B.; Santeufemio, C.; Brooks, W.; Jones, K. S.; Yamada, I.

In: Journal of Applied Physics, Vol. 92, No. 7, 01.10.2002, p. 3671-3678.

Research output: Contribution to journalArticle

Allen, LP, Insepov, Z, Fenner, DB, Santeufemio, C, Brooks, W, Jones, KS & Yamada, I 2002, 'Craters on silicon surfaces created by gas cluster ion impacts', Journal of Applied Physics, vol. 92, no. 7, pp. 3671-3678. https://doi.org/10.1063/1.1506422
Allen LP, Insepov Z, Fenner DB, Santeufemio C, Brooks W, Jones KS et al. Craters on silicon surfaces created by gas cluster ion impacts. Journal of Applied Physics. 2002 Oct 1;92(7):3671-3678. https://doi.org/10.1063/1.1506422
Allen, L. P. ; Insepov, Z. ; Fenner, D. B. ; Santeufemio, C. ; Brooks, W. ; Jones, K. S. ; Yamada, I. / Craters on silicon surfaces created by gas cluster ion impacts. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 7. pp. 3671-3678.
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