Cryogenic temperature performance of modulation-doped field-effect transistors

J. Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer, A. Y. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80 K is 3dB higher than at 300 K, and the current gain cutoff frequency fT increases from 32 GHz at 300 K, to 42 GHz at 80 K, which is the first observation of higher fT by direct measurement.

Original languageEnglish
Pages (from-to)777-779
Number of pages3
JournalElectronics Letters
Volume25
Issue number12
DOIs
Publication statusPublished - Sep 1 1989
Externally publishedYes

Keywords

  • Field-effect transistors
  • Microwave devices and components
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kolodzey, J., Laskar, J., Boor, S., Reis, S., Ketterson, A., Adesida, I., Sivco, D., Fischer, R., & Cho, A. Y. (1989). Cryogenic temperature performance of modulation-doped field-effect transistors. Electronics Letters, 25(12), 777-779. https://doi.org/10.1049/el:19890525