Cryogenic temperature performance of modulation-doped field-effect transistors

J. Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer, A. Y. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report S-parameter measurements of AlInAs/GaInAs/InP modulation-doped field-effect transistors (MODFETs) at cryogenic temperatures. The current gain at 80K is 3db higher than at 300K, and the current gain cutoff frequency fT increases from 32GHz at 300K, to 42GHz at 80K, which is claimed to be the first observation of higher fT by direct measurement.

Original languageEnglish
Pages (from-to)777-779
Number of pages3
JournalElectronics Letters
Volume25
Issue number12
Publication statusPublished - Jun 8 1989
Externally publishedYes

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High electron mobility transistors
Cryogenics
Scattering parameters
Cutoff frequency
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kolodzey, J., Laskar, J., Boor, S., Reis, S., Ketterson, A., Adesida, I., ... Cho, A. Y. (1989). Cryogenic temperature performance of modulation-doped field-effect transistors. Electronics Letters, 25(12), 777-779.

Cryogenic temperature performance of modulation-doped field-effect transistors. / Kolodzey, J.; Laskar, J.; Boor, S.; Reis, S.; Ketterson, A.; Adesida, I.; Sivco, D.; Fischer, R.; Cho, A. Y.

In: Electronics Letters, Vol. 25, No. 12, 08.06.1989, p. 777-779.

Research output: Contribution to journalArticle

Kolodzey, J, Laskar, J, Boor, S, Reis, S, Ketterson, A, Adesida, I, Sivco, D, Fischer, R & Cho, AY 1989, 'Cryogenic temperature performance of modulation-doped field-effect transistors', Electronics Letters, vol. 25, no. 12, pp. 777-779.
Kolodzey J, Laskar J, Boor S, Reis S, Ketterson A, Adesida I et al. Cryogenic temperature performance of modulation-doped field-effect transistors. Electronics Letters. 1989 Jun 8;25(12):777-779.
Kolodzey, J. ; Laskar, J. ; Boor, S. ; Reis, S. ; Ketterson, A. ; Adesida, I. ; Sivco, D. ; Fischer, R. ; Cho, A. Y. / Cryogenic temperature performance of modulation-doped field-effect transistors. In: Electronics Letters. 1989 ; Vol. 25, No. 12. pp. 777-779.
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