Current transport mechanisms in anisotype heterojunctions n-CdO/p-Si

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

n-CdO/p-Si heterojunction was prepared by means of the deposition of a cadmium oxide thin film (with n-type of conductivity) onto a polished polycrystalline silicon substrate (p-type of conductivity) using the spray-pyrolysis technique. I-V characteristics of the heterojunction were measured at different temperatures and the dominating current transport mechanisms were established at forward and reverse biases.

Original languageEnglish
Title of host publicationCriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Pages603-604
Number of pages2
Publication statusPublished - 2012
Externally publishedYes
Event2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012 - Sevastopol, Crimea, Ukraine
Duration: Sep 10 2012Sep 14 2012

Publication series

NameCriMiCo 2012 - 2012 22nd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings

Conference

Conference2012 22nd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2012
CountryUkraine
CitySevastopol, Crimea
Period9/10/129/14/12

ASJC Scopus subject areas

  • Computer Networks and Communications

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