DC and microwave characteristics of high transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

Q. Chen, J. W. Yang, M. A. Khan, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

Abstract

High quality AlGaN/GaN heterostructures have been successfully deposited on both n- and p-type SiC substrates. Heterostructure field effect transistors fabricated using these layers exhibited high channel current density (1.71 A/mm), well behaved pinch-off characteristics, and excellent extrinsic transconductance (Gm = 229 mS/mm). There is negligible channel current degradation up to a source to drain bias of 20 V as opposed to devices grown on sapphire substrates. The 0.25 μm gate-length devices fabricated on the heterostructures grown on p-type SiC has allowed us to extract a cutoff frequency of 53 GHz. The cutoff frequency showed little deterioration with increasing drain bias voltage. These results demonstrate for the first time the high frequency and high power operation potential of the heterostructure field effect transistors based on AlGaN grown on SiC.

Original languageEnglish
Pages (from-to)1071-1075
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Cutoff frequency
Transconductance
High electron mobility transistors
transconductance
Heterojunctions
cut-off
field effect transistors
direct current
Microwaves
microwaves
Aluminum Oxide
Substrates
Bias voltage
deterioration
Sapphire
Deterioration
sapphire
Current density
current density
degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

DC and microwave characteristics of high transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. / Chen, Q.; Yang, J. W.; Khan, M. A.; Ping, A. T.; Adesida, I.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 1997, p. 1071-1075.

Research output: Contribution to journalArticle

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AU - Adesida, I.

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