DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE

C. Lee, W. Lu, E. Piner, I. Adesida

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The fabrication and characterization of GaN MESFETs grown on sapphire recessed using inductively-coupled-plasma reactive ion etching (ICP-RIE) are reported for the first time. The MESFETs were recessed using a Cl2/Ar plasma in ICP-RIE, and the drain current was monitored during recess. The devices with a gate length of 0.25 μm exhibited a peak extrinsic transconductance of 36 mS/mm and a threshold voltage of -3.7 V. The unity current gain cutoff frequency fT and maximum frequency of oscillation fmax were measured to be 28 and 55 GHz, respectively at room temperature. This recessed-gate process produced high extrinsic transconductances and lower threshold voltages compared with those of unrecessed GaN MESFETs. Also, the values of fT and fmax are at least twice the highest frequency data ever reported for GaN MESFETs. The influence of substrate temperature on the DC and microwave characteristics is also reported.

Original languageEnglish
Pages (from-to)743-746
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number5
DOIs
Publication statusPublished - May 1 2002

Keywords

  • GaN
  • Gate recess
  • Inductively-coupled-plasma reactive ion etching
  • MESFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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