@article{53bdf97c6a904dcd8930046a96e46157,
title = "DC and RF Characterization of Short-Gate-Length InGaAs/InAlAs MODFET's",
abstract = "Lattice-matched InGaAs/InAlAs MODFET's with gate lengths down to 0.15 μm have been fabricated and characterized. A large discrepancy is found between the gm measured at de and micro-wave frequencies and is attributed to the finite time constant of electron emission from deep traps in the InAlAs. A maximum fTof 112 GHz is measured on a 0.15-μm gate-length device. Devices with more shallow recessed gates are found to have a 50-percent larger output conductance that causes the devices to exhibit an fT that is greater than fmax.",
author = "Ketterson, {A. A.} and J. Laskar and Brock, {T. L.} and I. Adesida and J. Kolodzey",
note = "Funding Information: Device fabrication began with mesa isolation and ohmic contact deposition using standard photolithography and liftoff processing. Ohmic contacts of AuGe/Ni/Au exhibited good surface morphol- Manuscript received January 16, 1989; revised May 8, 1989. This work was supported by the NSF under Grant CDR 85-22666. A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, and J. Kolodzey are with the Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801. 0. A. Aina and H. Hier are with the Bendix Aerospace Technology Center, Allied Corporation, Columbia, MD 21045. IEEE Log Number 8929501. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",
year = "1989",
month = oct,
doi = "10.1109/16.40922",
language = "English",
volume = "36",
pages = "2361--2363",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}