DC and RF Characterization of Short-Gate-Length InGaAs/InAlAs MODFET's

A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Lattice-matched InGaAs/InAlAs MODFET's with gate lengths down to 0.15 μm have been fabricated and characterized. A large discrepancy is found between the gm measured at de and micro-wave frequencies and is attributed to the finite time constant of electron emission from deep traps in the InAlAs. A maximum fTof 112 GHz is measured on a 0.15-μm gate-length device. Devices with more shallow recessed gates are found to have a 50-percent larger output conductance that causes the devices to exhibit an fT that is greater than fmax.

Original languageEnglish
Pages (from-to)2361-2363
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume36
Issue number10
DOIs
Publication statusPublished - Oct 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DC and RF Characterization of Short-Gate-Length InGaAs/InAlAs MODFET's'. Together they form a unique fingerprint.

Cite this