DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa; P. Fay; K. Ismail; J. O. Chu; B. S. Meyerson; I. Adesida

doi:10.1109/55.536289

DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si_0.3Ge_0.7 layer grown on a relaxed Si_0.7G_0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (f_r) of 24 GHz and a maximum frequency of oscillation (f_max) of 37 GHz were obtained for these devices.

Original language	English
Pages (from-to)	449-451
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	9
DOIs	https://doi.org/10.1109/55.536289
Publication status	Published - Sep 1 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Arafa, M., Fay, P., Ismail, K., Chu, J. O., Meyerson, B. S., & Adesida, I. (1996). DC and RF performance of 0.25 μm p-type SiGe MODFET. IEEE Electron Device Letters, 17(9), 449-451. https://doi.org/10.1109/55.536289

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AU - Adesida, I.

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