DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa; P. Fay; K. Ismail; J. O. Chu; B. S. Meyerson; I. Adesida

doi:10.1109/55.536289

DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si_0.3Ge_0.7 layer grown on a relaxed Si_0.7G_0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (f_r) of 24 GHz and a maximum frequency of oscillation (f_max) of 37 GHz were obtained for these devices.

Original language	English
Pages (from-to)	449-451
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	9
DOIs	https://doi.org/10.1109/55.536289
Publication status	Published - Sep 1 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{6037451c001e4e52ba910c18ef51d82f,

title = "DC and RF performance of 0.25 μm p-type SiGe MODFET",

abstract = "The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.",

author = "M. Arafa and P. Fay and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",

year = "1996",

month = sep,

day = "1",

doi = "10.1109/55.536289",

language = "English",

volume = "17",

pages = "449--451",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - DC and RF performance of 0.25 μm p-type SiGe MODFET

AU - Arafa, M.

AU - Fay, P.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Adesida, I.

PY - 1996/9/1

Y1 - 1996/9/1

N2 - The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.

AB - The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.

UR - http://www.scopus.com/inward/record.url?scp=0030241869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030241869&partnerID=8YFLogxK

U2 - 10.1109/55.536289

DO - 10.1109/55.536289

M3 - Article

AN - SCOPUS:0030241869

VL - 17

SP - 449

EP - 451

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -