DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number9
DOIs
Publication statusPublished - Sep 1996
Externally publishedYes

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Cutoff frequency
High electron mobility transistors
Buffers
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Arafa, M., Fay, P., Ismail, K., Chu, J. O., Meyerson, B. S., & Adesida, I. (1996). DC and RF performance of 0.25 μm p-type SiGe MODFET. IEEE Electron Device Letters, 17(9), 449-451. https://doi.org/10.1109/55.536289

DC and RF performance of 0.25 μm p-type SiGe MODFET. / Arafa, M.; Fay, P.; Ismail, K.; Chu, J. O.; Meyerson, B. S.; Adesida, I.

In: IEEE Electron Device Letters, Vol. 17, No. 9, 09.1996, p. 449-451.

Research output: Contribution to journalArticle

Arafa, M, Fay, P, Ismail, K, Chu, JO, Meyerson, BS & Adesida, I 1996, 'DC and RF performance of 0.25 μm p-type SiGe MODFET', IEEE Electron Device Letters, vol. 17, no. 9, pp. 449-451. https://doi.org/10.1109/55.536289
Arafa, M. ; Fay, P. ; Ismail, K. ; Chu, J. O. ; Meyerson, B. S. ; Adesida, I. / DC and RF performance of 0.25 μm p-type SiGe MODFET. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 9. pp. 449-451.
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