Abstract
The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.
Original language | English |
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Pages (from-to) | 449-451 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 17 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sep 1 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering