DC and RF performance of 0.25 μm p-type SiGe MODFET

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to journalArticle

26 Citations (Scopus)


The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - Sep 1 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'DC and RF performance of 0.25 μm p-type SiGe MODFET'. Together they form a unique fingerprint.

  • Cite this

    Arafa, M., Fay, P., Ismail, K., Chu, J. O., Meyerson, B. S., & Adesida, I. (1996). DC and RF performance of 0.25 μm p-type SiGe MODFET. IEEE Electron Device Letters, 17(9), 449-451. https://doi.org/10.1109/55.536289