@article{6037451c001e4e52ba910c18ef51d82f,
title = "DC and RF performance of 0.25 μm p-type SiGe MODFET",
abstract = "The DC and RF performance of 0.25 μm gateleagth p-type SiGe modulation-doped field-effect transistor (MODFFT) is reported. The hole channel consists of compressively strained Si0.3Ge0.7 layer grown on a relaxed Si0.7G0.3 buffer on a Si substrate. The combination of high-hole of 230 mS/mm was measured. A unity current gain cut-off frequency (fr) of 24 GHz and a maximum frequency of oscillation (fmax) of 37 GHz were obtained for these devices.",
author = "M. Arafa and P. Fay and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",
note = "Funding Information: Manuscript received March 21, 1996; revised May 7, 1996. This work was supported at the University of Illinois under JSEP Grant NO00 14-90-J-1270 and NSF ECD 89-43 166. M. Arafa, P. Fay, and I. Adesida are with the Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and the Department of Electrical Engineering, University of Illinois, Urbana-Champaign, IL 61801 USA. K. Ismail is with the Department of Electronics, Faculty of Engineering, Cairo University, Giza, Egypt. He is also with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA. J. 0. Chu and B. S. Meyerson are with the IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 USA. Publisher Item Identifier S 0741-3106(96)06878-4. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "1996",
month = sep,
doi = "10.1109/55.536289",
language = "English",
volume = "17",
pages = "449--451",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}