DC characterization of laser-debonded GaN HEMTs

C. P. Chan, K. K. Leung, M. Pilkuhn, C. Surya, T. M. Yue, G. Pang, H. Schweizer

Research output: Contribution to journalArticle

Abstract

We report experimental investigation of laser-assisted debonding of GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates. The debonded HEMTs were transferred onto silicon substrate for better thermal dissipation during operation. Dc characterization indicated no degradation in the I - V characteristics as long as the optimized laser power was used in the debonding process. Transmission electron microscopy (TEM) of the AlGaN/GaN heterojunctions before and after the laser debonding process did not indicate any increase in the dislocation density at the heterointerface. We have also conducted detailed characterizations of the low-frequency noise properties to investigate the defect properties over the entire active area of the device. Experimental data on the voltage noise power spectra measured from the same device before and after laser debonding indicated no significant change in the magnitude of the flicker noise over a wide temperature range. The results of XRD measurements revealed that the FWHM values before and after debonding are basically the same and also suggested that both out-of-plane tensile and in-plane compressive stresses present were both removed after the laser processing. Our results clearly demonstrate that the laser-assisted debonding process did not result in the increase in the material defect density.

Original languageEnglish
Pages (from-to)914-922
Number of pages9
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number3
DOIs
Publication statusPublished - Mar 1 2007
Externally publishedYes

Fingerprint

Debonding
High electron mobility transistors
high electron mobility transistors
direct current
Lasers
lasers
flicker
Aluminum Oxide
Defect density
defects
Metallorganic chemical vapor deposition
noise spectra
Silicon
Substrates
Power spectrum
Full width at half maximum
Compressive stress
Sapphire
metalorganic chemical vapor deposition
Heterojunctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

DC characterization of laser-debonded GaN HEMTs. / Chan, C. P.; Leung, K. K.; Pilkuhn, M.; Surya, C.; Yue, T. M.; Pang, G.; Schweizer, H.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 204, No. 3, 01.03.2007, p. 914-922.

Research output: Contribution to journalArticle

Chan, C. P. ; Leung, K. K. ; Pilkuhn, M. ; Surya, C. ; Yue, T. M. ; Pang, G. ; Schweizer, H. / DC characterization of laser-debonded GaN HEMTs. In: Physica Status Solidi (A) Applications and Materials Science. 2007 ; Vol. 204, No. 3. pp. 914-922.
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