DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates

W. Lu, V. Kumar, R. Schwindt, E. Piner, I. Adesida

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

High-performance AlGaN/GaN high electron-mobility transistors with 0.18-μm gate length have been fabricated on a sapphire substrate. The devices exhibited an extrinsic transconductance of 212 mS/mm, a unity current gain cutoff frequency (f T) of 101 GHz, and a maximum oscillation frequency (f MAX) of 140 GHz. At V ds = 4 V and I ds = 39.4 mA/mm, the devices exhibited a minimum noise figure (NF min) of 0.48 dB and an associated gain (G a) of 11.16 dB at 12 GHz. Also, at a fixed drain bias of 4 V with the drain current swept, the lowest NF min of 0.48 dB at 12 GHz was obtained at I ds = 40 mA/mm, and a peak G a of 11.71 dB at 12 GHz was obtained at I ds = 60 mA/mm. With the drain current held at 40 mA/mm and drain bias swept, the NF min increased almost linearly with the increase of drain bias. Meanwhile, the G a values decreased linearly with the increase of drain bias. At a fixed bias condition (V ds = 4 V and I ds = 40 mA/mm), the NF min values at 12 GHz increased from 0.32 dB at -55°C to 2.78 dB at 200°C. To our knowledge, these data represent the highest f T and f MAX, and the best microwave noise performance of any GaN-based FETs on sapphire substrates ever reported.

Original languageEnglish
Pages (from-to)2499-2504
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume50
Issue number11 SPEC
DOIs
Publication statusPublished - Nov 1 2002

Keywords

  • AlGaN
  • GaN
  • HEMT
  • Microwave noise

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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