Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho, F. A. Khan, I. Adesida, Z. Q. Fang, D. C. Look

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The effects of energetic ion-induced damage on deep traps in n-GaN have been investigated using deep level transient spectroscopy. The energetic ions were produced in an inductively coupled plasma reactive ion etching (ICP-RIE) system. The electrons captured at the trap levels E1 (0.25 eV) and E2 (0.62 eV), in a control sample, were found to depend logarithmically on the duration of the filling pulse, indicating a relationship to dislocations. The dramatic increase in the concentration of deep level E1 traps, as a function of etching-bias voltage, is thought to indicate the introduction of a V N-related complex. On the other hand, the concentration of deep level E2 traps shows an initial increase at an etching-bias of -50 V, followed by a decrease at higher etching-bias voltages. This trend was also observed in the room-temperature yellow luminescence spectra and x-ray photoelectron spectroscopy, which suggests that the deep level E2 is associated with point defects in the form of VGa-impurity complexes.

Original languageEnglish
Article number155314
JournalJournal of Physics D: Applied Physics
Volume41
Issue number15
DOIs
Publication statusPublished - Aug 7 2008
Externally publishedYes

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Inductively coupled plasma
Etching
Bias voltage
damage
etching
traps
Ions
Deep level transient spectroscopy
Plasma etching
Reactive ion etching
Point defects
Photoelectron spectroscopy
Luminescence
ions
Impurities
electric potential
X rays
Electrons
point defects
x ray spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Deep level characteristics in n-GaN with inductively coupled plasma damage. / Cho, H. K.; Khan, F. A.; Adesida, I.; Fang, Z. Q.; Look, D. C.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 15, 155314, 07.08.2008.

Research output: Contribution to journalArticle

Cho, H. K. ; Khan, F. A. ; Adesida, I. ; Fang, Z. Q. ; Look, D. C. / Deep level characteristics in n-GaN with inductively coupled plasma damage. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 15.
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