Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si

Shantan Kajjam, Siva Konduri, Max Noack, G. Shamshimov, N. Ussembayev, Vikram Dalal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the measurement of defect densities and minority carrier lifetimes in nanocrystalline Si samples contaminated with controlled amounts of oxygen. Two different measurement techniques, a capacitance-frequency (CF) and high temperature capacitance-voltage techniques were used. CF measurement is found to yield noisy defect profiles that could lead to inconclusive results. In this paper, we show an innovative technique to remove the noise and obtain clean data using wavelet transforms. This helps us discover that oxygen is creating both shallow and deep/midgap defect states in lieu with crystalline silicon. Minority carrier lifetime measured using reverse recovery techniques shows excellent inverse correlation between deep defects and minority carrier lifetimes through which hole capture cross section can be evaluated.

Original languageEnglish
Title of host publicationFilm Silicon Science and Technology
Pages169-173
Number of pages5
Volume1536
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 1 2013Apr 5 2013

Conference

Conference2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/1/134/5/13

Fingerprint

Carrier lifetime
Defect density
carrier lifetime
Capacitance
minority carriers
Oxygen
life (durability)
Defects
capacitance
defects
oxygen
Silicon
Wavelet transforms
frequency measurement
wavelet analysis
absorption cross sections
Crystalline materials
Recovery
recovery
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kajjam, S., Konduri, S., Noack, M., Shamshimov, G., Ussembayev, N., & Dalal, V. (2013). Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. In Film Silicon Science and Technology (Vol. 1536, pp. 169-173) https://doi.org/10.1557/opl.2013.786

Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. / Kajjam, Shantan; Konduri, Siva; Noack, Max; Shamshimov, G.; Ussembayev, N.; Dalal, Vikram.

Film Silicon Science and Technology. Vol. 1536 2013. p. 169-173.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kajjam, S, Konduri, S, Noack, M, Shamshimov, G, Ussembayev, N & Dalal, V 2013, Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. in Film Silicon Science and Technology. vol. 1536, pp. 169-173, 2013 MRS Spring Meeting, San Francisco, CA, United States, 4/1/13. https://doi.org/10.1557/opl.2013.786
Kajjam S, Konduri S, Noack M, Shamshimov G, Ussembayev N, Dalal V. Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. In Film Silicon Science and Technology. Vol. 1536. 2013. p. 169-173 https://doi.org/10.1557/opl.2013.786
Kajjam, Shantan ; Konduri, Siva ; Noack, Max ; Shamshimov, G. ; Ussembayev, N. ; Dalal, Vikram. / Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. Film Silicon Science and Technology. Vol. 1536 2013. pp. 169-173
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