Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si

Shantan Kajjam, Siva Konduri, Max Noack, G. Shamshimov, N. Ussembayev, Vikram Dalal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the measurement of defect densities and minority carrier lifetimes in nanocrystalline Si samples contaminated with controlled amounts of oxygen. Two different measurement techniques, a capacitance-frequency (CF) and high temperature capacitance-voltage techniques were used. CF measurement is found to yield noisy defect profiles that could lead to inconclusive results. In this paper, we show an innovative technique to remove the noise and obtain clean data using wavelet transforms. This helps us discover that oxygen is creating both shallow and deep/midgap defect states in lieu with crystalline silicon. Minority carrier lifetime measured using reverse recovery techniques shows excellent inverse correlation between deep defects and minority carrier lifetimes through which hole capture cross section can be evaluated.

Original languageEnglish
Title of host publicationFilm Silicon Science and Technology
Pages169-173
Number of pages5
Volume1536
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 1 2013Apr 5 2013

Conference

Conference2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/1/134/5/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Kajjam, S., Konduri, S., Noack, M., Shamshimov, G., Ussembayev, N., & Dalal, V. (2013). Defect densities and carrier lifetimes in oxygen doped nanocrystalline Si. In Film Silicon Science and Technology (Vol. 1536, pp. 169-173) https://doi.org/10.1557/opl.2013.786