Degradation mechanism of GaN-based LEDs with different growth parameters

K. K. Leung, W. K. Fong, P. K L Chan, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the degradation mechanism of GaN LEDs due to the application of a high d.c. stressing current. To identify the underlying process for device failure we examined the effects of the InGaN quantum well growth parameters on the hot-electron hardness of the devices. Systematic characterizations on the degradations in the microstructural, thermoreflectance, and low frequency noise properties of the devices were performed.

Original languageEnglish
Title of host publicationReliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials
Pages207-212
Number of pages6
Volume1195
Publication statusPublished - Nov 5 2010
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2009Dec 3 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1195
ISSN (Print)0272-9172

Conference

Conference2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/0912/3/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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