Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra

Ravi Raghunathan, Mark T. Crowley, Frédéric Grillot, Sayan D. Mukherjee, Nicholas G. Usechak, Vassilios Kovanis, Luke F. Lester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we investigate the dynamics of a nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, when the delay model is seeded with parameters extracted from the gain and loss spectra of a quantum dot laser. The approach used relies on narrowing the parameter space of the model by constraining the values of most of the model parameters to values extracted from gain and loss measurements at threshold. The impact of the free parameters, namely, the linewidth enhancement factors that are not available from the gain and loss measurements, on the device output is then analyzed using the results of direct integration of the delay model. In addition to predicting experimentally observed trends such as pulse trimming with applied absorber bias, the simulation results offer insight into the range of values of the linewidth enhancement factors in the gain and absorber sections permissible for stable mode-locking near threshold. Further, the simulations show that this range of permissible values progressively decreases with increasing bias voltage on the absorber section. This is important for telecomm and datacom applications where such devices are sought as pulsed sources, as well as in military RF photonic applications, where mode-locked diode lasers are used as low noise clocks for sampling.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8255
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XX - San Francisco, CA, United States
Duration: Jan 23 2012Jan 26 2012

Other

OtherPhysics and Simulation of Optoelectronic Devices XX
CountryUnited States
CitySan Francisco, CA
Period1/23/121/26/12

Fingerprint

Quantum dot lasers
Quantum Dots
Delay Differential Equations
Differential equations
differential equations
quantum dots
Laser
Absorber
Mode-locking
absorbers
Modeling
lasers
Linewidth
locking
Semiconductor lasers
Enhancement
semiconductor lasers
Passive mode locking
Mode-locked Lasers
Laser mode locking

Keywords

  • Delay differential equation
  • Linewidth enhancement factor
  • Passive mode-locking
  • Quantum dots
  • Semiconductor lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Raghunathan, R., Crowley, M. T., Grillot, F., Mukherjee, S. D., Usechak, N. G., Kovanis, V., & Lester, L. F. (2012). Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8255). [82551K] https://doi.org/10.1117/12.910007

Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra. / Raghunathan, Ravi; Crowley, Mark T.; Grillot, Frédéric; Mukherjee, Sayan D.; Usechak, Nicholas G.; Kovanis, Vassilios; Lester, Luke F.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8255 2012. 82551K.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Raghunathan, R, Crowley, MT, Grillot, F, Mukherjee, SD, Usechak, NG, Kovanis, V & Lester, LF 2012, Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8255, 82551K, Physics and Simulation of Optoelectronic Devices XX, San Francisco, CA, United States, 1/23/12. https://doi.org/10.1117/12.910007
Raghunathan R, Crowley MT, Grillot F, Mukherjee SD, Usechak NG, Kovanis V et al. Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8255. 2012. 82551K https://doi.org/10.1117/12.910007
Raghunathan, Ravi ; Crowley, Mark T. ; Grillot, Frédéric ; Mukherjee, Sayan D. ; Usechak, Nicholas G. ; Kovanis, Vassilios ; Lester, Luke F. / Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8255 2012.
@inproceedings{59c3500f4414432d9243099b1cf3c37e,
title = "Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra",
abstract = "In this paper, we investigate the dynamics of a nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, when the delay model is seeded with parameters extracted from the gain and loss spectra of a quantum dot laser. The approach used relies on narrowing the parameter space of the model by constraining the values of most of the model parameters to values extracted from gain and loss measurements at threshold. The impact of the free parameters, namely, the linewidth enhancement factors that are not available from the gain and loss measurements, on the device output is then analyzed using the results of direct integration of the delay model. In addition to predicting experimentally observed trends such as pulse trimming with applied absorber bias, the simulation results offer insight into the range of values of the linewidth enhancement factors in the gain and absorber sections permissible for stable mode-locking near threshold. Further, the simulations show that this range of permissible values progressively decreases with increasing bias voltage on the absorber section. This is important for telecomm and datacom applications where such devices are sought as pulsed sources, as well as in military RF photonic applications, where mode-locked diode lasers are used as low noise clocks for sampling.",
keywords = "Delay differential equation, Linewidth enhancement factor, Passive mode-locking, Quantum dots, Semiconductor lasers",
author = "Ravi Raghunathan and Crowley, {Mark T.} and Fr{\'e}d{\'e}ric Grillot and Mukherjee, {Sayan D.} and Usechak, {Nicholas G.} and Vassilios Kovanis and Lester, {Luke F.}",
year = "2012",
doi = "10.1117/12.910007",
language = "English",
isbn = "9780819488985",
volume = "8255",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Delay differential equation-based modeling of passively mode-locked quantum dot lasers using measured gain and loss spectra

AU - Raghunathan, Ravi

AU - Crowley, Mark T.

AU - Grillot, Frédéric

AU - Mukherjee, Sayan D.

AU - Usechak, Nicholas G.

AU - Kovanis, Vassilios

AU - Lester, Luke F.

PY - 2012

Y1 - 2012

N2 - In this paper, we investigate the dynamics of a nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, when the delay model is seeded with parameters extracted from the gain and loss spectra of a quantum dot laser. The approach used relies on narrowing the parameter space of the model by constraining the values of most of the model parameters to values extracted from gain and loss measurements at threshold. The impact of the free parameters, namely, the linewidth enhancement factors that are not available from the gain and loss measurements, on the device output is then analyzed using the results of direct integration of the delay model. In addition to predicting experimentally observed trends such as pulse trimming with applied absorber bias, the simulation results offer insight into the range of values of the linewidth enhancement factors in the gain and absorber sections permissible for stable mode-locking near threshold. Further, the simulations show that this range of permissible values progressively decreases with increasing bias voltage on the absorber section. This is important for telecomm and datacom applications where such devices are sought as pulsed sources, as well as in military RF photonic applications, where mode-locked diode lasers are used as low noise clocks for sampling.

AB - In this paper, we investigate the dynamics of a nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, when the delay model is seeded with parameters extracted from the gain and loss spectra of a quantum dot laser. The approach used relies on narrowing the parameter space of the model by constraining the values of most of the model parameters to values extracted from gain and loss measurements at threshold. The impact of the free parameters, namely, the linewidth enhancement factors that are not available from the gain and loss measurements, on the device output is then analyzed using the results of direct integration of the delay model. In addition to predicting experimentally observed trends such as pulse trimming with applied absorber bias, the simulation results offer insight into the range of values of the linewidth enhancement factors in the gain and absorber sections permissible for stable mode-locking near threshold. Further, the simulations show that this range of permissible values progressively decreases with increasing bias voltage on the absorber section. This is important for telecomm and datacom applications where such devices are sought as pulsed sources, as well as in military RF photonic applications, where mode-locked diode lasers are used as low noise clocks for sampling.

KW - Delay differential equation

KW - Linewidth enhancement factor

KW - Passive mode-locking

KW - Quantum dots

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=84859970123&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859970123&partnerID=8YFLogxK

U2 - 10.1117/12.910007

DO - 10.1117/12.910007

M3 - Conference contribution

SN - 9780819488985

VL - 8255

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -