Dependence of Current-Gain Cutoff Frequency on Gate Length in Submicron GaInAs/AlInAs MODFETs

A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina, H. Hier

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3 × 107cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg = 0.15 µm device, limited mainly by parasitic charge in the AlInAs.

Original languageEnglish
Pages (from-to)440-442
Number of pages3
JournalElectronics Letters
Volume25
Issue number7
DOIs
Publication statusPublished - Mar 30 1989
Externally publishedYes

Keywords

  • FETs
  • Semiconductor devices and materials
  • Semiconductors (III-V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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