Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs

A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina, H. Hier

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3×107 cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg=0.15 μm device, limited mainly by parasitic charge in the AlInAs.

Original languageEnglish
Pages (from-to)440-442
Number of pages3
JournalElectronics Letters
Volume25
Issue number7
Publication statusPublished - Jan 1 1989
Externally publishedYes

Fingerprint

Cutoff frequency
Transconductance
High electron mobility transistors
Capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ketterson, A. A., Laskar, J., Brock, T. L., Adesida, I., Kolodzey, J., Aina, O. A., & Hier, H. (1989). Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs. Electronics Letters, 25(7), 440-442.

Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs. / Ketterson, A. A.; Laskar, J.; Brock, T. L.; Adesida, I.; Kolodzey, J.; Aina, O. A.; Hier, H.

In: Electronics Letters, Vol. 25, No. 7, 01.01.1989, p. 440-442.

Research output: Contribution to journalArticle

Ketterson, AA, Laskar, J, Brock, TL, Adesida, I, Kolodzey, J, Aina, OA & Hier, H 1989, 'Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs', Electronics Letters, vol. 25, no. 7, pp. 440-442.
Ketterson AA, Laskar J, Brock TL, Adesida I, Kolodzey J, Aina OA et al. Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs. Electronics Letters. 1989 Jan 1;25(7):440-442.
Ketterson, A. A. ; Laskar, J. ; Brock, T. L. ; Adesida, I. ; Kolodzey, J. ; Aina, O. A. ; Hier, H. / Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs. In: Electronics Letters. 1989 ; Vol. 25, No. 7. pp. 440-442.
@article{22275917d8394687932adec7c83f0f6b,
title = "Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs",
abstract = "We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3×107 cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg=0.15 μm device, limited mainly by parasitic charge in the AlInAs.",
author = "Ketterson, {A. A.} and J. Laskar and Brock, {T. L.} and I. Adesida and J. Kolodzey and Aina, {O. A.} and H. Hier",
year = "1989",
month = "1",
day = "1",
language = "English",
volume = "25",
pages = "440--442",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "7",

}

TY - JOUR

T1 - Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs

AU - Ketterson, A. A.

AU - Laskar, J.

AU - Brock, T. L.

AU - Adesida, I.

AU - Kolodzey, J.

AU - Aina, O. A.

AU - Hier, H.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3×107 cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg=0.15 μm device, limited mainly by parasitic charge in the AlInAs.

AB - We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3×107 cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg=0.15 μm device, limited mainly by parasitic charge in the AlInAs.

UR - http://www.scopus.com/inward/record.url?scp=0024621419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024621419&partnerID=8YFLogxK

M3 - Article

VL - 25

SP - 440

EP - 442

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 7

ER -