Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs

A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.

Original languageEnglish
Pages (from-to)1081-1083
Number of pages3
JournalElectronics Letters
Volume33
Issue number12
Publication statusPublished - Jun 5 1997
Externally publishedYes

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Drain current
Cutoff frequency
High electron mobility transistors
Threshold voltage
Fabrication

Keywords

  • Field effect transistors
  • Gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ping, A. T., Asif Khan, M., Chen, Q., Yang, J. W., & Adesida, I. (1997). Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs. Electronics Letters, 33(12), 1081-1083.

Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs. / Ping, A. T.; Asif Khan, M.; Chen, Q.; Yang, J. W.; Adesida, I.

In: Electronics Letters, Vol. 33, No. 12, 05.06.1997, p. 1081-1083.

Research output: Contribution to journalArticle

Ping, AT, Asif Khan, M, Chen, Q, Yang, JW & Adesida, I 1997, 'Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs', Electronics Letters, vol. 33, no. 12, pp. 1081-1083.
Ping, A. T. ; Asif Khan, M. ; Chen, Q. ; Yang, J. W. ; Adesida, I. / Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs. In: Electronics Letters. 1997 ; Vol. 33, No. 12. pp. 1081-1083.
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