Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs

A. T. Ping; M. Asif Khan; Q. Chen; J. W. Yang; I. Adesida

doi:10.1049/el:19970702

Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs

A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, I. Adesida

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (f_t), maximum frequency of oscillation (f_max), and threshold voltage are investigated against gate length. The measured f_t and f_max values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.

Original language	English
Pages (from-to)	1081-1083
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	12
DOIs	https://doi.org/10.1049/el:19970702
Publication status	Published - Jun 5 1997
Externally published	Yes

Keywords

Field effect transistors
Gallium nitride

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19970702

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abstract = "The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.",

keywords = "Field effect transistors, Gallium nitride",

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AU - Ping, A. T.

AU - Asif Khan, M.

AU - Chen, Q.

AU - Yang, J. W.

AU - Adesida, I.

PY - 1997/6/5

Y1 - 1997/6/5

N2 - The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.

AB - The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.

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KW - Gallium nitride

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