The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.
- Field effect transistors
- Gallium nitride
ASJC Scopus subject areas
- Electrical and Electronic Engineering