Abstract
The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.
| Original language | English |
|---|---|
| Pages (from-to) | 1081-1083 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 33 |
| Issue number | 12 |
| Publication status | Published - Jun 5 1997 |
| Externally published | Yes |
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Keywords
- Field effect transistors
- Gallium nitride
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs. / Ping, A. T.; Asif Khan, M.; Chen, Q.; Yang, J. W.; Adesida, I.
In: Electronics Letters, Vol. 33, No. 12, 05.06.1997, p. 1081-1083.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dependence of DC and RF characteristics on gate length for high current AIGaN/GaN HFETs
AU - Ping, A. T.
AU - Asif Khan, M.
AU - Chen, Q.
AU - Yang, J. W.
AU - Adesida, I.
PY - 1997/6/5
Y1 - 1997/6/5
N2 - The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.
AB - The fabrication and performance of AlGaN/GaN heterostructure field-effect transistors of various gate lengths are reported. The unity current gain cutoff frequency (ft), maximum frequency of oscillation (fmax), and threshold voltage are investigated against gate length. The measured ft and fmax values ranged from 37 and 81GHz to 11 and 31GHz for the 0.25 and lμm gate length devices, respectively. These devices also exhibited drain currents as high as 1A/mm.
KW - Field effect transistors
KW - Gallium nitride
UR - http://www.scopus.com/inward/record.url?scp=0031554334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031554334&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031554334
VL - 33
SP - 1081
EP - 1083
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 12
ER -