TY - JOUR
T1 - Design and analysis of a multichannel transceiver for high-speed optical interconnects
AU - Sangirov, Jamshid
AU - Uddin, Mohammad Rakib
AU - Sangirov, Gulomjon
AU - Ukaegbu, Ikechi Augustine
AU - Lee, Tae-Woo
AU - Park, Hyo-Hoon
PY - 2016/1/1
Y1 - 2016/1/1
N2 - In this paper, we designed a multichannel transceiver for high-speed optical interconnect applications. The proposed multichannel transceiver is designed in 0.13 µm CMOS technology. The multichannel transceiver consists of 4-channel transmitter (Tx) and 4-channel receiver (Rx). The simulated Tx has a 3-dB BW of 5.85 GHz with a voltage gain of 35 dB and the measured 3-dB BW is 5.20 GHz. The simulated Rx has the 3-dB BW of 5.95 GHz with a transimpedance gain of 80 dBΩ and the measured 3-dB BW of Rx is 5.25 GHz. To improve frequency operation of Rx, transimpedance amplifier (TIA) active feedback has been applied. Utilization of an active feedback in TIA significantly improves the frequency operation, where 3-dB BW has been improved from 3.27 to 11 GHz with transimpedance gain of 65 dBΩ. Furthermore, to improve the output light of performance temperature sensing circuit has also been integrated in the same silicon substrate with transceiver chip to provide stable output light power temperature range of −30 ~ 100 °C.
AB - In this paper, we designed a multichannel transceiver for high-speed optical interconnect applications. The proposed multichannel transceiver is designed in 0.13 µm CMOS technology. The multichannel transceiver consists of 4-channel transmitter (Tx) and 4-channel receiver (Rx). The simulated Tx has a 3-dB BW of 5.85 GHz with a voltage gain of 35 dB and the measured 3-dB BW is 5.20 GHz. The simulated Rx has the 3-dB BW of 5.95 GHz with a transimpedance gain of 80 dBΩ and the measured 3-dB BW of Rx is 5.25 GHz. To improve frequency operation of Rx, transimpedance amplifier (TIA) active feedback has been applied. Utilization of an active feedback in TIA significantly improves the frequency operation, where 3-dB BW has been improved from 3.27 to 11 GHz with transimpedance gain of 65 dBΩ. Furthermore, to improve the output light of performance temperature sensing circuit has also been integrated in the same silicon substrate with transceiver chip to provide stable output light power temperature range of −30 ~ 100 °C.
M3 - Article
VL - 48
SP - 1
EP - 14
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
SN - 0306-8919
IS - 1
ER -