Design of Simultaneous Bidirectional CMOS Transceiver With a Resistor-Transconductor Hybrid for Optical Chip-to-Chip Interconnects

Ikechi Augustine Ukaegbu, Jamshid Sangirov, Trong-Hieu Ngo, Tae-Woo Lee, Hyo-Hoon Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A simultaneous bidirectional CMOS transceiver for full duplex chip-to-chip optical interconnects is proposed, utilizing a resistor-transconductor (R-gm) hybrid. The hybrid separates the inbound signal from the input/output compound signal. The simultaneous bidirectional CMOS transceiver is designed in a 0.18 μm Si-CMOS technology, with power dissipation of 79 mW and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 4.6 GHz for both the transmitter and the receiver with a 3-dB gain of 26.6 dB and 10.6 dB, respectively, in full-duplex mode.
Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIX, SPIE Photonics West
PublisherSPIE
Pages2N-1 - 2N-8
Number of pages79332
Publication statusPublished - Feb 21 2011

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    Ukaegbu, I. A., Sangirov, J., Ngo, T-H., Lee, T-W., & Park, H-H. (2011). Design of Simultaneous Bidirectional CMOS Transceiver With a Resistor-Transconductor Hybrid for Optical Chip-to-Chip Interconnects. In Physics and Simulation of Optoelectronic Devices XIX, SPIE Photonics West (pp. 2N-1 - 2N-8). SPIE.