Device and fabrication issues of high performance Si/SiGe FETs

M. Arafa, I. Adesida, K. Ismail

Research output: Contribution to journalConference articlepeer-review

Abstract

A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

Original languageEnglish
Pages (from-to)83-92
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Volume533
DOIs
Publication statusPublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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