Device and fabrication issues of high performance Si/SiGe FETs

M. Arafa, I. Adesida, K. Ismail

Research output: Contribution to journalConference articlepeer-review


A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

Original languageEnglish
Pages (from-to)83-92
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 17 1998

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Device and fabrication issues of high performance Si/SiGe FETs'. Together they form a unique fingerprint.

Cite this