Device and fabrication issues of high performance Si/SiGe FETs

M. Arafa; I. Adesida; K. Ismail

doi:10.1557/proc-533-83

Device and fabrication issues of high performance Si/SiGe FETs

M. Arafa, I. Adesida, K. Ismail

Research output: Contribution to journal › Conference article › peer-review

Abstract

A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

Original language	English
Pages (from-to)	83-92
Number of pages	10
Journal	Materials Research Society Symposium - Proceedings
Volume	533
DOIs	https://doi.org/10.1557/proc-533-83
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 17 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Device and fabrication issues of high performance Si/SiGe FETs",

abstract = "A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.",

author = "M. Arafa and I. Adesida and K. Ismail",

year = "1998",

doi = "10.1557/proc-533-83",

language = "English",

volume = "533",

pages = "83--92",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 17-04-1998",

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T1 - Device and fabrication issues of high performance Si/SiGe FETs

AU - Arafa, M.

AU - Adesida, I.

AU - Ismail, K.

PY - 1998

Y1 - 1998

N2 - A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

AB - A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

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DO - 10.1557/proc-533-83

M3 - Conference article

AN - SCOPUS:0032297725

SN - 0272-9172

VL - 533

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EP - 92

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 17 April 1998

ER -

Device and fabrication issues of high performance Si/SiGe FETs

Abstract

ASJC Scopus subject areas

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