Digital performance of high-speed MSM-HEMT monolithically integrated photoreceivers

P. Fay, W. Wohlmuth, C. Caneau, S. Chandrasekhar, I. Adesida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A multigigabit digital performance of a monolithic metal-semiconductor-metal high electron mobility transistor (MSM-HEMT) photoreceiver lattice matched to an InP substrate is presented. The integration of MSM photodetectors and HEMT is done via vertical integration method in which the HEMT and MSM layers are grown sequentially on a planar substrate in a single uninterrupted growth. Receiver output noise power spectral density measurements were performed. Deviation from the expected sensitivity performance was observed experimentally, and possible sources of the discrepancies are examined.

Original languageEnglish
Pages (from-to)475-478
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
MSM (semiconductors)
Metals
high speed
Semiconductor materials
metals
Power spectral density
Substrates
Photodetectors
photometers
receivers
deviation
output
sensitivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Digital performance of high-speed MSM-HEMT monolithically integrated photoreceivers. / Fay, P.; Wohlmuth, W.; Caneau, C.; Chandrasekhar, S.; Adesida, I.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1997, p. 475-478.

Research output: Contribution to journalArticle

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