Abstract
This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.
Original language | English |
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Article number | 1600232 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 14 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - Mar 1 2017 |
Externally published | Yes |
Keywords
- CdTe
- charge transport
- diodes
- MoO
- radiation detector
- rectifying junction
ASJC Scopus subject areas
- Condensed Matter Physics