Diodes based on semi-insulating CdTe crystals with Mo/MoOx contacts for X- and γ-ray detectors

O. Maslyanchuk, V. Kulchynsky, M. Solovan, V. Gnatyuk, C. Potiriadis, I. Kaissas, V. Brus

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.

Original languageEnglish
Article number1600232
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume14
Issue number3-4
DOIs
Publication statusPublished - Mar 1 2017
Externally publishedYes

Keywords

  • CdTe
  • charge transport
  • diodes
  • MoO
  • radiation detector
  • rectifying junction

ASJC Scopus subject areas

  • Condensed Matter Physics

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