Diodes based on semi-insulating CdTe crystals with Mo/MoOx contacts for X- and γ-ray detectors

O. Maslyanchuk; V. Kulchynsky; M. Solovan; V. Gnatyuk; C. Potiriadis; I. Kaissas; V. Brus

doi:10.1002/pssc.201600232

Diodes based on semi-insulating CdTe crystals with Mo/MoO_x contacts for X- and γ-ray detectors

O. Maslyanchuk, V. Kulchynsky, M. Solovan, V. Gnatyuk, C. Potiriadis, I. Kaissas, V. Brus

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper reports on the possible applications of molybdenum oxide (Mo/MoO_x) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO_x/р-CdTe/MoO_x-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO_x/р-CdTe/MoO_x-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.

Original language	English
Article number	1600232
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	14
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201600232
Publication status	Published - Mar 1 2017
Externally published	Yes

Keywords

CdTe
charge transport
diodes
MoO
radiation detector
rectifying junction

ASJC Scopus subject areas

Condensed Matter Physics

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Diodes based on semi-insulating CdTe crystals with Mo/MoO_x contacts for X- and γ-ray detectors. / Maslyanchuk, O.; Kulchynsky, V.; Solovan, M.; Gnatyuk, V.; Potiriadis, C.; Kaissas, I.; Brus, V.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 14, No. 3-4, 1600232, 01.03.2017.

Research output: Contribution to journal › Article › peer-review

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abstract = "This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.",

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AU - Maslyanchuk, O.

AU - Kulchynsky, V.

AU - Solovan, M.

AU - Gnatyuk, V.

AU - Potiriadis, C.

AU - Kaissas, I.

AU - Brus, V.

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N2 - This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.

AB - This paper reports on the possible applications of molybdenum oxide (Mo/MoOx) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoOx/р-CdTe/MoOx-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoOx/р-CdTe/MoOx-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication.

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