Dislocation-induced nonuniform interfacial reactions of Ti/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure

Liang Wang, Fitih M. Mohammed, Ilesanmi Adesida

Research output: Contribution to journalArticle

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Abstract

Transmission electron microscopy (TEM) is utilized to elucidate the postannealing interfacial microstructure of TiAlMoAu metallization with AlGaNGaN heterostructures to gain insight into the formation mechanism of low-resistance ohmic contacts. The reaction between the metal and the AlGaN layer does not proceed uniformly. Localized penetration through the AlGaN layer beyond the two-dimensional electron gas (2DEG) is observed while partial consumption of the AlGaN layer is noted in other areas. Analytical TEM analyses confirm that the main reaction product is TiN. A correlation between the appearance of TiN islands and threading dislocations is observed. Threading dislocations serve as short-circuit diffusion channels, and are responsible for the nonuniform reaction. TiN islands have a large total area of intimate contact with the 2DEG, and since no tunneling of electron through the AlGaN is required, a low-resistance ohmic contact is obtained.

Original languageEnglish
Article number141915
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number14
DOIs
Publication statusPublished - Oct 3 2005
Externally publishedYes

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electric contacts
low resistance
transmission electron microscopy
short circuits
reaction products
electron gas
penetration
microstructure
metals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dislocation-induced nonuniform interfacial reactions of Ti/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure. / Wang, Liang; Mohammed, Fitih M.; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 87, No. 14, 141915, 03.10.2005, p. 1-3.

Research output: Contribution to journalArticle

@article{23d20f7f780249ee99d491aaad228599,
title = "Dislocation-induced nonuniform interfacial reactions of Ti/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure",
abstract = "Transmission electron microscopy (TEM) is utilized to elucidate the postannealing interfacial microstructure of TiAlMoAu metallization with AlGaNGaN heterostructures to gain insight into the formation mechanism of low-resistance ohmic contacts. The reaction between the metal and the AlGaN layer does not proceed uniformly. Localized penetration through the AlGaN layer beyond the two-dimensional electron gas (2DEG) is observed while partial consumption of the AlGaN layer is noted in other areas. Analytical TEM analyses confirm that the main reaction product is TiN. A correlation between the appearance of TiN islands and threading dislocations is observed. Threading dislocations serve as short-circuit diffusion channels, and are responsible for the nonuniform reaction. TiN islands have a large total area of intimate contact with the 2DEG, and since no tunneling of electron through the AlGaN is required, a low-resistance ohmic contact is obtained.",
author = "Liang Wang and Mohammed, {Fitih M.} and Ilesanmi Adesida",
year = "2005",
month = "10",
day = "3",
doi = "10.1063/1.2081136",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Dislocation-induced nonuniform interfacial reactions of Ti/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure

AU - Wang, Liang

AU - Mohammed, Fitih M.

AU - Adesida, Ilesanmi

PY - 2005/10/3

Y1 - 2005/10/3

N2 - Transmission electron microscopy (TEM) is utilized to elucidate the postannealing interfacial microstructure of TiAlMoAu metallization with AlGaNGaN heterostructures to gain insight into the formation mechanism of low-resistance ohmic contacts. The reaction between the metal and the AlGaN layer does not proceed uniformly. Localized penetration through the AlGaN layer beyond the two-dimensional electron gas (2DEG) is observed while partial consumption of the AlGaN layer is noted in other areas. Analytical TEM analyses confirm that the main reaction product is TiN. A correlation between the appearance of TiN islands and threading dislocations is observed. Threading dislocations serve as short-circuit diffusion channels, and are responsible for the nonuniform reaction. TiN islands have a large total area of intimate contact with the 2DEG, and since no tunneling of electron through the AlGaN is required, a low-resistance ohmic contact is obtained.

AB - Transmission electron microscopy (TEM) is utilized to elucidate the postannealing interfacial microstructure of TiAlMoAu metallization with AlGaNGaN heterostructures to gain insight into the formation mechanism of low-resistance ohmic contacts. The reaction between the metal and the AlGaN layer does not proceed uniformly. Localized penetration through the AlGaN layer beyond the two-dimensional electron gas (2DEG) is observed while partial consumption of the AlGaN layer is noted in other areas. Analytical TEM analyses confirm that the main reaction product is TiN. A correlation between the appearance of TiN islands and threading dislocations is observed. Threading dislocations serve as short-circuit diffusion channels, and are responsible for the nonuniform reaction. TiN islands have a large total area of intimate contact with the 2DEG, and since no tunneling of electron through the AlGaN is required, a low-resistance ohmic contact is obtained.

UR - http://www.scopus.com/inward/record.url?scp=28344438079&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344438079&partnerID=8YFLogxK

U2 - 10.1063/1.2081136

DO - 10.1063/1.2081136

M3 - Article

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 141915

ER -