Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP

J. E. Maslar, S. R. Kisting, P. W. Bohn, I. Adesida, D. G. Ballegeer, C. Caneau, R. Bhat

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A split in the frequencies between the longitudinal-optic (LO) phonon modes in the dipole-allowed and dipole-forbidden geometries is observed in ion-etched InP by Raman scattering. Dipole-forbidden LO-phonon scattering has been reported in pure as well as mixed crystals; however, a frequency split has been observed only in AlxGa1-xAs crystals. The observation of this split in InP is attributed to a relaxation of the selection rules due to the structural disorder induced by ion etching.

Original languageEnglish
Pages (from-to)1820-1822
Number of pages3
JournalPhysical Review B
Volume46
Issue number3
DOIs
Publication statusPublished - Jan 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Disorder-induced allowed-forbidden phonon splittings in ion-etched epitaxial InP'. Together they form a unique fingerprint.

Cite this