Abstract
A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 282-287 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 27 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 1998 |
Keywords
- Dopant-selective etching
- Gallium nitride (GaN)
- Photoelectrochemical (PEC) etching
- Photoenhanced etching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Youtsey, C., Bulman, G., & Adesida, I. (1998). Dopant-selective photoenhanced wet etching of GaN. Journal of Electronic Materials, 27(4), 282-287. https://doi.org/10.1007/s11664-998-0400-0