Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

Original languageEnglish
Pages (from-to)282-287
Number of pages6
JournalJournal of Electronic Materials
Volume27
Issue number4
Publication statusPublished - Apr 1998
Externally publishedYes

Fingerprint

Arc lamps
Wet etching
Etching
Lighting
Doping (additives)
etching
arc lamps
illumination

Keywords

  • Dopant-selective etching
  • Gallium nitride (GaN)
  • Photoelectrochemical (PEC) etching
  • Photoenhanced etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Dopant-selective photoenhanced wet etching of GaN. / Youtsey, C.; Bulman, G.; Adesida, I.

In: Journal of Electronic Materials, Vol. 27, No. 4, 04.1998, p. 282-287.

Research output: Contribution to journalArticle

Youtsey, C, Bulman, G & Adesida, I 1998, 'Dopant-selective photoenhanced wet etching of GaN', Journal of Electronic Materials, vol. 27, no. 4, pp. 282-287.
Youtsey, C. ; Bulman, G. ; Adesida, I. / Dopant-selective photoenhanced wet etching of GaN. In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 4. pp. 282-287.
@article{f7146e73dce94fa9a85498dd5b77387d,
title = "Dopant-selective photoenhanced wet etching of GaN",
abstract = "A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.",
keywords = "Dopant-selective etching, Gallium nitride (GaN), Photoelectrochemical (PEC) etching, Photoenhanced etching",
author = "C. Youtsey and G. Bulman and I. Adesida",
year = "1998",
month = "4",
language = "English",
volume = "27",
pages = "282--287",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - Dopant-selective photoenhanced wet etching of GaN

AU - Youtsey, C.

AU - Bulman, G.

AU - Adesida, I.

PY - 1998/4

Y1 - 1998/4

N2 - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

AB - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

KW - Dopant-selective etching

KW - Gallium nitride (GaN)

KW - Photoelectrochemical (PEC) etching

KW - Photoenhanced etching

UR - http://www.scopus.com/inward/record.url?scp=3242841752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242841752&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242841752

VL - 27

SP - 282

EP - 287

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -