TY - JOUR
T1 - Dopant-selective photoenhanced wet etching of GaN
AU - Youtsey, C.
AU - Bulman, G.
AU - Adesida, I.
N1 - Funding Information:
The authors are grateful to Q. Chen and J.W. Yang of APA Optics for providing the n-on-i layer structure used in this work. In addition, the authors would like to thank P. Fay, L. Romano, and M. Arafa for their helpful conversations. This research was supported by the National Science Foundation Grant No. ECS 95-21671 and the Defense Advanced Research Projects Agency Grant No. F19628-96-C-0066.
PY - 1998/4
Y1 - 1998/4
N2 - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
AB - A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.
KW - Dopant-selective etching
KW - Gallium nitride (GaN)
KW - Photoelectrochemical (PEC) etching
KW - Photoenhanced etching
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U2 - 10.1007/s11664-998-0400-0
DO - 10.1007/s11664-998-0400-0
M3 - Article
AN - SCOPUS:3242841752
VL - 27
SP - 282
EP - 287
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 4
ER -