Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journal › Article

79 Citations (Scopus)

Abstract

A dopant-selective photoelectrochemical wet etching process for GaN is described. The process utilizes KOH solution and Hg arc lamp illumination to achieve selective etching of n-type GaN with respect to intrinsic and p-type GaN. An intrinsic GaN etch-stop layer as well as the selective undercutting of a buried n-type layer within a p-n GaN homostructure are demonstrated.

Original languageEnglish
Pages (from-to)282-287
Number of pages6
JournalJournal of Electronic Materials
Volume27
Issue number4
Publication statusPublished - Apr 1998
Externally publishedYes

Fingerprint

Arc lamps
Wet etching
Etching
Lighting
Doping (additives)
etching
arc lamps
illumination

Keywords

  • Dopant-selective etching
  • Gallium nitride (GaN)
  • Photoelectrochemical (PEC) etching
  • Photoenhanced etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Dopant-selective photoenhanced wet etching of GaN. / Youtsey, C.; Bulman, G.; Adesida, I.

In: Journal of Electronic Materials, Vol. 27, No. 4, 04.1998, p. 282-287.

Research output: Contribution to journal › Article

Youtsey, C, Bulman, G & Adesida, I 1998, 'Dopant-selective photoenhanced wet etching of GaN', Journal of Electronic Materials, vol. 27, no. 4, pp. 282-287.
Youtsey C, Bulman G, Adesida I. Dopant-selective photoenhanced wet etching of GaN. Journal of Electronic Materials. 1998 Apr;27(4):282-287.
Youtsey, C. ; Bulman, G. ; Adesida, I. / Dopant-selective photoenhanced wet etching of GaN. In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 4. pp. 282-287.
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