A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs0.56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels and a gate-length of 1.0 μm is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.
ASJC Scopus subject areas
- Electrical and Electronic Engineering