Doping Effects and Charge-Transfer Dynamics at Hybrid Perovskite/Graphene Interfaces

Viktor V. Brus, Felix Lang, Steffen Fengler, Thomas Dittrich, Jörg Rappich, Norbert H. Nickel

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this work doping effects and charge transfer processes at the perovskite/graphene interface in the dark and under illumination are investigated. Hall effect, field effect, and surface photovoltage measurements suggest that hybrid perovskite layers induce strong n-type doping of graphene after annealing at low temperature (330 K) in vacuum. It is found that the observed photoinduced changes in the electronic properties of graphene, functionalized by a hybrid organic–inorganic perovskite layer, are caused by two independent mechanisms with different time scales: (i) a fast collection of photogenerated holes by graphene from the perovskite layer and (ii) a slow ion rearrangement in the perovskite lattice at the perovskite/graphene interface. The observed annealing-induced n-type and photoinduced p-type doping effects allow to reversibly switch the type of conduction of the perovskite/graphene system.

Original languageEnglish
Article number1800826
JournalAdvanced Materials Interfaces
Volume5
Issue number20
DOIs
Publication statusPublished - Oct 23 2018
Externally publishedYes

Keywords

  • charge transport
  • doping
  • graphene
  • perovskite

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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