Doping of GaN by Mg diffusion

Titan To, A. B. Djurišić, M. H. Xie, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO2). Samples were subsequently annealed in N2 flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages75-78
Number of pages4
Volume2002-January
ISBN (Electronic)0780375718
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: Dec 11 2002Dec 13 2002

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period12/11/0212/13/02

Fingerprint

Doping (additives)
Thermal evaporation
Aluminum Oxide
Molecular beam epitaxy
Sapphire
Photoluminescence
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

To, T., Djurišić, A. B., Xie, M. H., Fong, W. K., & Surya, C. (2002). Doping of GaN by Mg diffusion. In 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (Vol. 2002-January, pp. 75-78). [1237193] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237193

Doping of GaN by Mg diffusion. / To, Titan; Djurišić, A. B.; Xie, M. H.; Fong, W. K.; Surya, C.

2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. p. 75-78 1237193.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

To, T, Djurišić, AB, Xie, MH, Fong, WK & Surya, C 2002, Doping of GaN by Mg diffusion. in 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. vol. 2002-January, 1237193, Institute of Electrical and Electronics Engineers Inc., pp. 75-78, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 12/11/02. https://doi.org/10.1109/COMMAD.2002.1237193
To T, Djurišić AB, Xie MH, Fong WK, Surya C. Doping of GaN by Mg diffusion. In 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January. Institute of Electrical and Electronics Engineers Inc. 2002. p. 75-78. 1237193 https://doi.org/10.1109/COMMAD.2002.1237193
To, Titan ; Djurišić, A. B. ; Xie, M. H. ; Fong, W. K. ; Surya, C. / Doping of GaN by Mg diffusion. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. pp. 75-78
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