TY - GEN
T1 - Doping of GaN by Mg diffusion
AU - To, Titan
AU - Djurišić, A. B.
AU - Xie, M. H.
AU - Fong, W. K.
AU - Surya, C.
N1 - Publisher Copyright:
© 2002 IEEE.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO2). Samples were subsequently annealed in N2 flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.
AB - In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO2). Samples were subsequently annealed in N2 flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.
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U2 - 10.1109/COMMAD.2002.1237193
DO - 10.1109/COMMAD.2002.1237193
M3 - Conference contribution
AN - SCOPUS:84952705300
VL - 2002-January
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 75
EP - 78
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -