Doping of GaN by Mg diffusion

Titan To; A. B. Djurišić; M. H. Xie; W. K. Fong; C. Surya

doi:10.1109/COMMAD.2002.1237193

Doping of GaN by Mg diffusion

Titan To, A. B. Djurišić, M. H. Xie, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO₂). Samples were subsequently annealed in N₂ flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	75-78
Number of pages	4
Volume	2002-January
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237193
Publication status	Published - Jan 1 2002
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: Dec 11 2002 → Dec 13 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country	Australia
City	Sydney
Period	12/11/02 → 12/13/02

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

To, T., Djurišić, A. B., Xie, M. H., Fong, W. K., & Surya, C. (2002). Doping of GaN by Mg diffusion. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (Vol. 2002-January, pp. 75-78). [1237193] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237193

Doping of GaN by Mg diffusion. / To, Titan; Djurišić, A. B.; Xie, M. H.; Fong, W. K.; Surya, C.

2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. p. 75-78 1237193 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

To, T, Djurišić, AB, Xie, MH, Fong, WK & Surya, C 2002, Doping of GaN by Mg diffusion. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. vol. 2002-January, 1237193, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 75-78, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 12/11/02. https://doi.org/10.1109/COMMAD.2002.1237193

To T, Djurišić AB, Xie MH, Fong WK, Surya C. Doping of GaN by Mg diffusion. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January. Institute of Electrical and Electronics Engineers Inc. 2002. p. 75-78. 1237193. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2002.1237193

To, Titan ; Djurišić, A. B. ; Xie, M. H. ; Fong, W. K. ; Surya, C. / Doping of GaN by Mg diffusion. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. pp. 75-78 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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N2 - In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO2). Samples were subsequently annealed in N2 flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.

AB - In this work, we report a study of GaN doping by Mg diffusion. GaN films were grown on sapphire or SiC substrates by MBE. The samples were characterized by Hall measurements and photoluminescence before and after the diffusion. The diffusion was performed in the following manner: Mg layer was deposited on the sample by thermal evaporation, followed by the deposition of a capping layer (metallic or SiO2). Samples were subsequently annealed in N2 flow at 850°C or 900°C for 6 hours. We show that Mg diffusion doping is feasible, and that the results are highly dependent on the capping layer. However, it should be pointed out that the obtained results for different samples with the same capping layer may show significant variations in spite of similar properties before the diffusion. This is most likely due to relationship between Mg doping and the presence of threading dislocations, which hinders the reproducibility of diffusion doping process.

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Access to Document

10.1109/COMMAD.2002.1237193