Dry and wet etching for group III - Nitrides

I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled- plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Dry etching
Wet etching
Nitrides
Plasma etching
Reactive ion etching
Inductively coupled plasma
Photodetectors
Field emission
Transistors
Microwaves
Ions
Semiconductor materials
Fabrication
Wavelength
Processing
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Adesida, I., Youtsey, C., Ping, A. T., Khan, F., Romano, L. T., & Bulman, G. (1999). Dry and wet etching for group III - Nitrides. MRS Internet Journal of Nitride Semiconductor Research, 4(SUPPL. 1).

Dry and wet etching for group III - Nitrides. / Adesida, I.; Youtsey, C.; Ping, A. T.; Khan, F.; Romano, L. T.; Bulman, G.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 1999.

Research output: Contribution to journalArticle

Adesida, I, Youtsey, C, Ping, AT, Khan, F, Romano, LT & Bulman, G 1999, 'Dry and wet etching for group III - Nitrides', MRS Internet Journal of Nitride Semiconductor Research, vol. 4, no. SUPPL. 1.
Adesida I, Youtsey C, Ping AT, Khan F, Romano LT, Bulman G. Dry and wet etching for group III - Nitrides. MRS Internet Journal of Nitride Semiconductor Research. 1999;4(SUPPL. 1).
Adesida, I. ; Youtsey, C. ; Ping, A. T. ; Khan, F. ; Romano, L. T. ; Bulman, G. / Dry and wet etching for group III - Nitrides. In: MRS Internet Journal of Nitride Semiconductor Research. 1999 ; Vol. 4, No. SUPPL. 1.
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