Abstract
The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled- plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.
| Original language | English |
|---|---|
| Journal | MRS Internet Journal of Nitride Semiconductor Research |
| Volume | 4 |
| Issue number | SUPPL. 1 |
| Publication status | Published - 1999 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Science(all)
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Dry and wet etching for group III - Nitrides. / Adesida, I.; Youtsey, C.; Ping, A. T.; Khan, F.; Romano, L. T.; Bulman, G.
In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 1999.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dry and wet etching for group III - Nitrides
AU - Adesida, I.
AU - Youtsey, C.
AU - Ping, A. T.
AU - Khan, F.
AU - Romano, L. T.
AU - Bulman, G.
PY - 1999
Y1 - 1999
N2 - The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled- plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.
AB - The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled- plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.
UR - http://www.scopus.com/inward/record.url?scp=0003212649&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0003212649&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0003212649
VL - 4
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
SN - 1092-5783
IS - SUPPL. 1
ER -