DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST.

I. ADESIDA, J. D. CHINN, L. RATHBUN, E. D. WOLF

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Abstract

THE ETCHING CHARACTERISTICS OF POLYMETHYL METHACRYLATE (PMMA) EXPOSED TO **2**8SI** + IONS AND THEN DRY DEVELOPED BY REACTIVE ION ETCHING IN AN OXYGEN PLASMA HAVE BEEN INVESTIGATED. IT IS SHOWN THAT ETCH RATES OF RESISTS EXPOSED TO DOSES GREATER THAN 1 * 10**1**5 CM** - **2 (1. 6 * 10** - **4 C/CM**2) AT 40 KEV ARE MUCH SMALLER THAN THOSE OF UNEXPOSED RESISTS. A DIFFERENTIAL ETCH RATES AS HIGH AS 11 IS DEMONSTRATED.THIS PROPERTY OF ION BEAM INHIBITED ETCHING (IBIE) HAS BEENUSED TO FABRICATE RESIST STRUCTURES WITH SUBMICROMETER FEATURES USING ″ SEE-THROUGH ″ THIN SILICON FILM MASKS. WITH FURTHER DEVELOPMENTS OF HIGH BRIGHTNESS ION SOURCES, IBIE MAY BE A USEFUL TECHNIQUE TO REALIZE HIGH RESOLUTION NEGATIVE TONE IMAGES IN RESISTS.

Original languageEnglish
Pages (from-to)666-671
Number of pages6
JournalJ VAC SCI TECHNOL
VolumeV 21
Issue numberN 2
DOIs
Publication statusPublished - 1982

ASJC Scopus subject areas

  • Engineering(all)

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    ADESIDA, I., CHINN, J. D., RATHBUN, L., & WOLF, E. D. (1982). DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST. J VAC SCI TECHNOL, V 21(N 2), 666-671. https://doi.org/10.1116/1.571810