DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST.

I. ADESIDA, J. D. CHINN, L. RATHBUN, E. D. WOLF

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

THE ETCHING CHARACTERISTICS OF POLYMETHYL METHACRYLATE (PMMA) EXPOSED TO **2**8SI** + IONS AND THEN DRY DEVELOPED BY REACTIVE ION ETCHING IN AN OXYGEN PLASMA HAVE BEEN INVESTIGATED. IT IS SHOWN THAT ETCH RATES OF RESISTS EXPOSED TO DOSES GREATER THAN 1 * 10**1**5 CM** - **2 (1. 6 * 10** - **4 C/CM**2) AT 40 KEV ARE MUCH SMALLER THAN THOSE OF UNEXPOSED RESISTS. A DIFFERENTIAL ETCH RATES AS HIGH AS 11 IS DEMONSTRATED.THIS PROPERTY OF ION BEAM INHIBITED ETCHING (IBIE) HAS BEENUSED TO FABRICATE RESIST STRUCTURES WITH SUBMICROMETER FEATURES USING ″ SEE-THROUGH ″ THIN SILICON FILM MASKS. WITH FURTHER DEVELOPMENTS OF HIGH BRIGHTNESS ION SOURCES, IBIE MAY BE A USEFUL TECHNIQUE TO REALIZE HIGH RESOLUTION NEGATIVE TONE IMAGES IN RESISTS.

Original languageEnglish
Pages (from-to)666-671
Number of pages6
JournalJ VAC SCI TECHNOL
VolumeV 21
Issue numberN 2
Publication statusPublished - Jul 1982
Externally publishedYes

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Polymethyl methacrylates
Ion beams
Etching
Reactive ion etching
Ion sources
Masks
Luminance
Plasmas
Silicon
Oxygen
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ADESIDA, I., CHINN, J. D., RATHBUN, L., & WOLF, E. D. (1982). DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST. J VAC SCI TECHNOL, V 21(N 2), 666-671.

DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST. / ADESIDA, I.; CHINN, J. D.; RATHBUN, L.; WOLF, E. D.

In: J VAC SCI TECHNOL, Vol. V 21, No. N 2, 07.1982, p. 666-671.

Research output: Contribution to journalArticle

ADESIDA, I, CHINN, JD, RATHBUN, L & WOLF, ED 1982, 'DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST.', J VAC SCI TECHNOL, vol. V 21, no. N 2, pp. 666-671.
ADESIDA I, CHINN JD, RATHBUN L, WOLF ED. DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST. J VAC SCI TECHNOL. 1982 Jul;V 21(N 2):666-671.
ADESIDA, I. ; CHINN, J. D. ; RATHBUN, L. ; WOLF, E. D. / DRY DEVELOPMENT OF ION BEAM EXPOSED PMMA RESIST. In: J VAC SCI TECHNOL. 1982 ; Vol. V 21, No. N 2. pp. 666-671.
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