Dry etching of AlxGa1-xN using chemically assisted ion beam etching

A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalSemiconductor Science and Technology
Volume12
Issue number1
DOIs
Publication statusPublished - Jan 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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