Dry etching of AlxGa1-xN using chemically assisted ion beam etching

A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalSemiconductor Science and Technology
Volume12
Issue number1
DOIs
Publication statusPublished - Jan 1997
Externally publishedYes

Fingerprint

Dry etching
Ion beams
Etching
ion beams
etching
Organic Chemicals
Organic chemicals
Auger electron spectroscopy
Stoichiometry
Auger spectroscopy
metalorganic chemical vapor deposition
electron spectroscopy
stoichiometry
Chemical vapor deposition
Gases
Metals
Chemical analysis
gases
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Dry etching of AlxGa1-xN using chemically assisted ion beam etching. / Ping, A. T.; Khan, M. Asif; Adesida, I.

In: Semiconductor Science and Technology, Vol. 12, No. 1, 01.1997, p. 133-135.

Research output: Contribution to journalArticle

@article{83ee8a1d928843e18fd6517041c48bb0,
title = "Dry etching of AlxGa1-xN using chemically assisted ion beam etching",
abstract = "The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.",
author = "Ping, {A. T.} and Khan, {M. Asif} and I. Adesida",
year = "1997",
month = "1",
doi = "10.1088/0268-1242/12/1/022",
language = "English",
volume = "12",
pages = "133--135",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Dry etching of AlxGa1-xN using chemically assisted ion beam etching

AU - Ping, A. T.

AU - Khan, M. Asif

AU - Adesida, I.

PY - 1997/1

Y1 - 1997/1

N2 - The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

AB - The dry etching characteristics of AlxGa1-xN grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and Cl2 gas. Etch rates were investigated as a function of Al composition in AlxGa1-xN ranging from GaN to AIN and as a function of ion beam energy. Anisotropic etched structures with smooth surfaces are demonstrated in Al0.4Ga0.6N layers. Auger electron spectroscopy of etched AlGaN surfaces shows that the stoichiometry is essentially unchanged after etching.

UR - http://www.scopus.com/inward/record.url?scp=0030672244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030672244&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/12/1/022

DO - 10.1088/0268-1242/12/1/022

M3 - Article

VL - 12

SP - 133

EP - 135

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

ER -