DRY ETCHING OF MATERIALS USED IN VLSI CIRCUITS.

E. D. Wolf, I. Adesida, J. D. Chinn, M. Zhang, J. Z. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reactive ion etching (RIE), reactive ion beam etching (RIBE), and chemically-assisted ion beam etching (CAIBE) are variations on similar dry etching processes that provide a high degree of etch profile control at submicron linewidths. This paper presents a comparison of the etch rates and profiles obtained for stacked n** plus polysilicon/refractory metal silicides films using SF//6/O//2 RIE, SiF//4/Cl//2 RIE and Cl//2/Ar** plus CAIBE. The etch rates for broad beam Cl//2/Ar** plus CAIBE of several refractory metals and refractory metal silicides are reported.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages415-420
Number of pages6
ISBN (Print)0120449803
Publication statusPublished - Dec 1 1983

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Wolf, E. D., Adesida, I., Chinn, J. D., Zhang, M., & Li, J. Z. (1983). DRY ETCHING OF MATERIALS USED IN VLSI CIRCUITS. In Unknown Host Publication Title (pp. 415-420). Academic Press.