Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors

Mohamed Arafa, Walter A. Wohlmuth, Patrick Fay, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

As the dimensions of state-of-the art metal-semiconductor-rnetal photodetectors (MSMPD's) decrease, effects that are insignificant for relatively large geometries become significant in the optoelectronic performance of submicron MSMPD's. Accurate modeling of these effects is necessary to precisely predict the performance of these devices by computer simulation. In this paper, a technique that accounts for the effect of diffraction from a single slot and interference from adjacent interelectrode gaps for front-illuminated MSMPD's is presented. For the purpose of demonstrating the technique, InGaAs MSMPD's illuminated with 1.55-μm wavelength have been simulated. The results are compared to the conventional shadowed exponential decay model. The new model predicts fundamentally different carrier distribution within the device. This disparity has been observed for devices with electrodes spaced up to 1.5 μm apart, emphasizing the significance of interference effects even for conventional devices.

Original languageEnglish
Pages (from-to)62-67
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume45
Issue number1
DOIs
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Photodetectors
photometers
Diffraction
Metals
Semiconductor materials
interference
diffraction
metals
slots
Optoelectronic devices
computerized simulation
Wavelength
Electrodes
electrodes
Geometry
Computer simulation
decay
geometry
wavelengths

Keywords

  • Diffraction
  • Interference
  • Modeling
  • Photodetectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors. / Arafa, Mohamed; Wohlmuth, Walter A.; Fay, Patrick; Adesida, Ilesanmi.

In: IEEE Transactions on Electron Devices, Vol. 45, No. 1, 1998, p. 62-67.

Research output: Contribution to journalArticle

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