Effect of frequency dependent electron-electron interaction on resonant tunneling

D. J. Fisher, C. Zhang, S. M. Stewart, W. Xu, M. L F Lerch, A. D. Martin, L. Eaves

Research output: Contribution to journalArticlepeer-review

Abstract

In electron resonant tunneling through a double barrier structure, we show that dynamical electron-electron interactions in the resonant well can give rise to additional tunneling satellites due to collective electronic excitations. We present a first principle treatment for frequency-dependent electron-electron interactions in the resonant tunneling problem. The result confirms the previously proposed plasmon assisted resonant tunneling mechanism. We also find that the particle-hole excitation has very little effect on resonant tunneling. Our result can be applied to study the effects of various electronic excitations on the resonant tunneling of electrons.

Original languageEnglish
Pages (from-to)239-248
Number of pages10
JournalSuperlattices and Microstructures
Volume18
Issue number3
DOIs
Publication statusPublished - Jan 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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