Abstract
The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 1327-1330 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jul 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. / Rommel, Sean L.; Jang, Jae Hyung; Lu, Wu; Cueva, Gabriel; Zhou, Ling; Adesida, Ilesanmi; Pajer, Gary; Whaley, Ralph; Lepore, Allen; Schellanbarger, Zane; Abeles, Joseph H.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1327-1330.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication
AU - Rommel, Sean L.
AU - Jang, Jae Hyung
AU - Lu, Wu
AU - Cueva, Gabriel
AU - Zhou, Ling
AU - Adesida, Ilesanmi
AU - Pajer, Gary
AU - Whaley, Ralph
AU - Lepore, Allen
AU - Schellanbarger, Zane
AU - Abeles, Joseph H.
PY - 2002/7
Y1 - 2002/7
N2 - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
AB - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0035982530&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035982530&partnerID=8YFLogxK
U2 - 10.1116/1.1486232
DO - 10.1116/1.1486232
M3 - Article
VL - 20
SP - 1327
EP - 1330
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -