Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel, Jae Hyung Jang, Wu Lu, Gabriel Cueva, Ling Zhou, Ilesanmi Adesida, Gary Pajer, Ralph Whaley, Allen Lepore, Zane Schellanbarger, Joseph H. Abeles

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

Original languageEnglish
Pages (from-to)1327-1330
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
Publication statusPublished - Jul 2002
Externally publishedYes

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Photonic devices
Plasma etching
Reactive ion etching
Inductively coupled plasma
Heterojunctions
Resonators
Etching
etching
photonics
chemistry
Fabrication
fabrication
profiles
Q factors
ions
resonators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. / Rommel, Sean L.; Jang, Jae Hyung; Lu, Wu; Cueva, Gabriel; Zhou, Ling; Adesida, Ilesanmi; Pajer, Gary; Whaley, Ralph; Lepore, Allen; Schellanbarger, Zane; Abeles, Joseph H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1327-1330.

Research output: Contribution to journalArticle

Rommel, Sean L. ; Jang, Jae Hyung ; Lu, Wu ; Cueva, Gabriel ; Zhou, Ling ; Adesida, Ilesanmi ; Pajer, Gary ; Whaley, Ralph ; Lepore, Allen ; Schellanbarger, Zane ; Abeles, Joseph H. / Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; Vol. 20, No. 4. pp. 1327-1330.
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AU - Zhou, Ling

AU - Adesida, Ilesanmi

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AU - Schellanbarger, Zane

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