Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel, Jae Hyung Jang, Wu Lu, Gabriel Cueva, Ling Zhou, Ilesanmi Adesida, Gary Pajer, Ralph Whaley, Allen Lepore, Zane Schellanbarger, Joseph H. Abeles

Research output: Contribution to journalConference article

54 Citations (Scopus)


The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

Original languageEnglish
Pages (from-to)1327-1330
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - Jul 1 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this