TY - JOUR
T1 - Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication
AU - Rommel, Sean L.
AU - Jang, Jae Hyung
AU - Lu, Wu
AU - Cueva, Gabriel
AU - Zhou, Ling
AU - Adesida, Ilesanmi
AU - Pajer, Gary
AU - Whaley, Ralph
AU - Lepore, Allen
AU - Schellanbarger, Zane
AU - Abeles, Joseph H.
PY - 2002/7/1
Y1 - 2002/7/1
N2 - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
AB - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
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U2 - 10.1116/1.1486232
DO - 10.1116/1.1486232
M3 - Conference article
AN - SCOPUS:0035982530
VL - 20
SP - 1327
EP - 1330
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 4
T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces
Y2 - 6 January 2002 through 10 January 2002
ER -