Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel; Jae Hyung Jang; Wu Lu; Gabriel Cueva; Ling Zhou; Ilesanmi Adesida; Gary Pajer; Ralph Whaley; Allen Lepore; Zane Schellanbarger; Joseph H. Abeles

doi:10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel, Jae Hyung Jang, Wu Lu, Gabriel Cueva, Ling Zhou, Ilesanmi Adesida, Gary Pajer, Ralph Whaley, Allen Lepore, Zane Schellanbarger, Joseph H. Abeles

Research output: Contribution to journal › Conference article › peer-review

61 Citations (Scopus)

Abstract

The positive impact of the addition of H₂ to a Cl₂/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H₂ balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

Original language	English
Pages (from-to)	1327-1330
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1486232
Publication status	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1486232

Cite this

Rommel, S. L., Jang, J. H., Lu, W., Cueva, G., Zhou, L., Adesida, I., Pajer, G., Whaley, R., Lepore, A., Schellanbarger, Z., & Abeles, J. H. (2002). Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1327-1330. https://doi.org/10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. / Rommel, Sean L.; Jang, Jae Hyung; Lu, Wu et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1327-1330.

Research output: Contribution to journal › Conference article › peer-review

Rommel, SL, Jang, JH, Lu, W, Cueva, G, Zhou, L, Adesida, I, Pajer, G, Whaley, R, Lepore, A, Schellanbarger, Z & Abeles, JH 2002, 'Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, pp. 1327-1330. https://doi.org/10.1116/1.1486232

@article{200c4b694c3e46f2aa055ac93a9b26e8,

title = "Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication",

abstract = "The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.",

author = "Rommel, {Sean L.} and Jang, {Jae Hyung} and Wu Lu and Gabriel Cueva and Ling Zhou and Ilesanmi Adesida and Gary Pajer and Ralph Whaley and Allen Lepore and Zane Schellanbarger and Abeles, {Joseph H.}",

year = "2002",

month = jul,

doi = "10.1116/1.1486232",

language = "English",

volume = "20",

pages = "1327--1330",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

}

TY - JOUR

T1 - Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

AU - Rommel, Sean L.

AU - Jang, Jae Hyung

AU - Lu, Wu

AU - Cueva, Gabriel

AU - Zhou, Ling

AU - Adesida, Ilesanmi

AU - Pajer, Gary

AU - Whaley, Ralph

AU - Lepore, Allen

AU - Schellanbarger, Zane

AU - Abeles, Joseph H.

PY - 2002/7

Y1 - 2002/7

N2 - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

AB - The positive impact of the addition of H2 to a Cl2/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H2 balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0035982530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035982530&partnerID=8YFLogxK

U2 - 10.1116/1.1486232

DO - 10.1116/1.1486232

M3 - Conference article

AN - SCOPUS:0035982530

SN - 1071-1023

VL - 20

SP - 1327

EP - 1330

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this