Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel; Jae Hyung Jang; Wu Lu; Gabriel Cueva; Ling Zhou; Ilesanmi Adesida; Gary Pajer; Ralph Whaley; Allen Lepore; Zane Schellanbarger; Joseph H. Abeles

doi:10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Sean L. Rommel, Jae Hyung Jang, Wu Lu, Gabriel Cueva, Ling Zhou, Ilesanmi Adesida, Gary Pajer, Ralph Whaley, Allen Lepore, Zane Schellanbarger, Joseph H. Abeles

Nazarbayev University

Research output: Contribution to journal › Conference article

54 Citations (Scopus)

Abstract

The positive impact of the addition of H₂ to a Cl₂/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H₂ balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.

Original language	English
Pages (from-to)	1327-1330
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1486232
Publication status	Published - Jul 1 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

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ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Rommel, S. L., Jang, J. H., Lu, W., Cueva, G., Zhou, L., Adesida, I., Pajer, G., Whaley, R., Lepore, A., Schellanbarger, Z., & Abeles, J. H. (2002). Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1327-1330. https://doi.org/10.1116/1.1486232

Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. / Rommel, Sean L.; Jang, Jae Hyung; Lu, Wu; Cueva, Gabriel; Zhou, Ling; Adesida, Ilesanmi; Pajer, Gary; Whaley, Ralph; Lepore, Allen; Schellanbarger, Zane; Abeles, Joseph H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 01.07.2002, p. 1327-1330.

Research output: Contribution to journal › Conference article

Rommel, SL, Jang, JH, Lu, W, Cueva, G, Zhou, L, Adesida, I, Pajer, G, Whaley, R, Lepore, A, Schellanbarger, Z & Abeles, JH 2002, 'Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, pp. 1327-1330. https://doi.org/10.1116/1.1486232

Rommel, Sean L. ; Jang, Jae Hyung ; Lu, Wu ; Cueva, Gabriel ; Zhou, Ling ; Adesida, Ilesanmi ; Pajer, Gary ; Whaley, Ralph ; Lepore, Allen ; Schellanbarger, Zane ; Abeles, Joseph H. / Effect of H₂ on the etch profile of InP/InGaAsP alloys in Cl₂/Ar/H₂ inductively coupled plasma reactive ion etching chemistries for photonic device fabrication. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; Vol. 20, No. 4. pp. 1327-1330.

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AU - Lu, Wu

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AU - Zhou, Ling

AU - Adesida, Ilesanmi

AU - Pajer, Gary

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10.1116/1.1486232