TY - JOUR
T1 - Effect of Mo-doping in SnO2 thin film photoanodes for water oxidation
AU - Bozheyev, Farabi
AU - Akinoglu, Eser Metin
AU - Wu, Lihua
AU - Lou, Shuting
AU - Giersig, Michael
N1 - Funding Information:
This work was funded by the Guangdong Innovative and Entrepreneurial Team Program 2016ZT06C517 . E.M.A. acknowledges the Australian Research Council Grant CE170100026 and funding by the Alexander von Humboldt Foundation through a Feodor Lynen Research Fellowship. This research was supported by Ministry of Education and Science of the Republic of Kazakhstan AP05132270 and AP05135686 , and Nazarbayev University SSH2020014 .
Publisher Copyright:
© 2020 Hydrogen Energy Publications LLC
PY - 2020/11/27
Y1 - 2020/11/27
N2 - New semiconducting metal oxides of various compositions are of great interest for efficient solar water oxidation. In this report, Mo-doped SnO2 (Mo:SnO2) thin films deposited by reactive magnetron co-sputtering in the Ar and O2 gas environment are studied. The Sn to Mo ratio in the films can be controlled by changing the O2 partial pressure and the deposition power of the Sn and Mo targets. Increasing the Mo concentration in the film leads to the increase in the oxygen vacancy density, which limits the maximum achievable photocurrent density. The thin films exhibit a direct band gap of 2.7 eV, the maximum achievable photocurrent density of 0.6 mA cm−2 at 0 VRHE and the onset potential of 0.14 VRHE. The incident photon to current transfer (IPCE) efficiency of 22% is shown at a 450 nm wavelength. The initial performance of the Mo:SnO2 thin films is evaluated for solar water oxidation.
AB - New semiconducting metal oxides of various compositions are of great interest for efficient solar water oxidation. In this report, Mo-doped SnO2 (Mo:SnO2) thin films deposited by reactive magnetron co-sputtering in the Ar and O2 gas environment are studied. The Sn to Mo ratio in the films can be controlled by changing the O2 partial pressure and the deposition power of the Sn and Mo targets. Increasing the Mo concentration in the film leads to the increase in the oxygen vacancy density, which limits the maximum achievable photocurrent density. The thin films exhibit a direct band gap of 2.7 eV, the maximum achievable photocurrent density of 0.6 mA cm−2 at 0 VRHE and the onset potential of 0.14 VRHE. The incident photon to current transfer (IPCE) efficiency of 22% is shown at a 450 nm wavelength. The initial performance of the Mo:SnO2 thin films is evaluated for solar water oxidation.
KW - Band gap
KW - Mo:SnO
KW - Photoanode
KW - Photocurrent density
KW - Sn/mo ratio
KW - Thin films
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U2 - 10.1016/j.ijhydene.2020.09.050
DO - 10.1016/j.ijhydene.2020.09.050
M3 - Article
AN - SCOPUS:85092062457
SN - 0360-3199
VL - 45
SP - 33448
EP - 33456
JO - International Journal of Hydrogen Energy
JF - International Journal of Hydrogen Energy
IS - 58
ER -
