Effect of recess length on DC and RF performance of gate-recessed AlGaN/ GaN HEMTs

A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. M. Dabiran, P. Chow, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We present the effect of gate-recess length on DC and RF performance of AlGaN/GaN gate-recessed HEMTs. 0.15 μm gate-length AlGaN/GaN HEMTs with varying gate-recess lengths were fabricated. DC and microwave performance did not exhibit significant dependence on the gate-recess length. We attribute these results to essentially identical series source resistances, so that all the gate-recessed HEMTs exhibited similar DC and RF performance. This conclusion is derived from the fact that the values of ohmic contact resistances dominated over the values of channel resistances. The nature of the breakdown in the HEMTs was also studied. The results of temperature-dependent breakdown voltage measurements suggest that the breakdown mechanism was mainly due to tunneling gate leakage currents via shallow traps.

Original languageEnglish
Title of host publicationProceedings IEEE Lester Eastman Conference on High Performance Devices
Pages428-435
Number of pages8
Publication statusPublished - Dec 1 2002
EventProceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States
Duration: Aug 6 2002Aug 8 2002

Publication series

NameProceedings IEEE Lester Eastman Conference on High Performance Devices

Other

OtherProceedings IEEE Lester Eastman Conference on High Performance Devices
CountryUnited States
CityNewark, DE
Period8/6/028/8/02

ASJC Scopus subject areas

  • Engineering(all)

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