Effect of recess length on DC and RF performance of gate-recessed AlGaN/ GaN HEMTs

A. Kuliev, V. Kumar, R. Schwindt, D. Selvanathan, A. M. Dabiran, P. Chow, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

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Engineering & Materials Science