Effect of shunts on thin-film CdTe module performance

Galymzhan T. Koishiyev, James R. Sites

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


A 2-D numerical circuit model is used to analyze the impact of shunts on basic performance parameters of a CdTe thin-film module. A numerical estimate of module-efficiency loss in the worst-case scenario due to shunts of different severity and fractional module area is presented. It is shown that absolute module-efficiency loss △η(%) varies in systematic fashion with these shunt parameters. Estimates of △η based on simple area-weighted efficiency are typically low by 3-4 times. Furthermore, the distribution pattern of shunts over the module plays a significant role in the module loss. A reliable parameter P to characterize the distribution of shunts is introduced, and its effect on module-efficiency loss, as well as individual-parameter (FF, Voc and Jsc) losses, is shown. Furthermore, higher transparent-conductive-oxide (TCO) sheet resistance is shown to increase shunt isolation and consequently mitigate the efficiency decrease.

Original languageEnglish
Title of host publicationThin-Film Compound Semiconductor Photovoltaics - 2009
Number of pages6
Publication statusPublished - May 14 2010
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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