TY - JOUR
T1 - Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
AU - Surya, C.
AU - Wang, W.
AU - Fong, W. K.
AU - Chan, C. H.
AU - Lai, P. T.
N1 - Funding Information:
Arkno,r/ed~ements-Fundinfogr this proiecti s providedb v the UniversityR esearchG rant from Hong Kong Polytech- nic University,t heC RCG of Hong Kong University and the Hong Kong Research Grants Council.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
AB - Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
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U2 - 10.1016/0038-1101(96)00069-X
DO - 10.1016/0038-1101(96)00069-X
M3 - Article
AN - SCOPUS:0030285442
VL - 39
SP - 1577
EP - 1580
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -