Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs

C. Surya, W. Wang, W. K. Fong, C. H. Chan, P. T. Lai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

Original languageEnglish
Pages (from-to)1577-1580
Number of pages4
JournalSolid-State Electronics
Volume39
Issue number11
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

Fingerprint

flicker
field effect transistors
Power spectrum
noise spectra
power spectra
Argon
traps
MOSFET devices
Stress relaxation
Ion beams
stress relaxation
Chemical activation
metal oxide semiconductors
Temperature
energy distribution
ion beams
argon
activation
low frequencies
temperature dependence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs. / Surya, C.; Wang, W.; Fong, W. K.; Chan, C. H.; Lai, P. T.

In: Solid-State Electronics, Vol. 39, No. 11, 01.01.1996, p. 1577-1580.

Research output: Contribution to journalArticle

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