Abstract
Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
| Original language | English |
|---|---|
| Pages (from-to) | 1577-1580 |
| Number of pages | 4 |
| Journal | Solid-State Electronics |
| Volume | 39 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Jan 1 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs. / Surya, C.; Wang, W.; Fong, W. K.; Chan, C. H.; Lai, P. T.
In: Solid-State Electronics, Vol. 39, No. 11, 01.01.1996, p. 1577-1580.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
AU - Surya, C.
AU - Wang, W.
AU - Fong, W. K.
AU - Chan, C. H.
AU - Lai, P. T.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
AB - Flicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
UR - http://www.scopus.com/inward/record.url?scp=0030285442&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030285442&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(96)00069-X
DO - 10.1016/0038-1101(96)00069-X
M3 - Article
VL - 39
SP - 1577
EP - 1580
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 11
ER -