The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Dec 20 2007|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering