Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

Sookyung Choi, Niu Jin, Vipan Kumar, Ilesanmi Adesida, Mark Shannon

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.

Original languageEnglish
Pages (from-to)2085-2088
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

photographic developers
Nanowires
Electron beams
nanowires
electron beams
Fabrication
Silicon
Hydrogen
fabrication
silicon
hydrogen
etching
gratings
Temperature
Dry etching
temperature
Wet etching
Masks
periodic variations
Etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.",
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AU - Choi, Sookyung

AU - Jin, Niu

AU - Kumar, Vipan

AU - Adesida, Ilesanmi

AU - Shannon, Mark

PY - 2007

Y1 - 2007

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AB - The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.

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