Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

Sookyung Choi, Niu Jin, Vipan Kumar, Ilesanmi Adesida, Mark Shannon

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed.

Original languageEnglish
Pages (from-to)2085-2088
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - Dec 20 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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