Effects of indium surfactant on optical and structural properties of MBE grown GaN

W. K. Fong, C. F. Zhu, C. Surya, B. H. Leung, C. C. Cheng, B. Sundaravel, E. Z. Luo, J. B. Xu, I. H. Wilson

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


A small indium flux was used as a surfactant during the growth of gallium nitride films by rf-plasma assisted molecular beam epitaxy. The effects of the indium surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, and low-frequency noise. Photoluminescence spectra show that GaN thin films grown in the presence of In surfactant exhibit suppressed yellow luminescence compared to films grown under the same experimental conditions but without In surfactant.

Original languageEnglish
Pages (from-to)44-57
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: Jul 26 2000Jul 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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