Effects of intermediate-temperature buffer layers on low-frequency noise performance of GaN based Schottky barriers

B. H. Leung, N. H. Chan, W. K. Fong, C. F. Zhu, H. F. Lui, C. K. Ng, K. C. Wong, C. Surya

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Gallium nitride based Schottky barriers were fabricated by rf-plasma assisted molecular beam epitaxy. The GaN epitaxial layers were deposited on novel double buffer layers that consisted of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low temperature buffer layer grown at 500°C. Low frequency excess noise was measured from the diodes. The results demonstrate clear dependency of voltage noise power spectra on the thickness of ITBL with substantial reduction in the noise level for an ITBL thickness of 800 nm. The improvement in noise performance was attributed to reduction of defect density in the GaN epitaxial layers by the utilization of ITBL in the growth process.

Original languageEnglish
Pages148-152
Number of pages5
Publication statusPublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: Jun 30 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
CountryChina
CityHong Kong
Period6/30/01 → …

ASJC Scopus subject areas

  • Engineering(all)

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    Leung, B. H., Chan, N. H., Fong, W. K., Zhu, C. F., Lui, H. F., Ng, C. K., Wong, K. C., & Surya, C. (2001). Effects of intermediate-temperature buffer layers on low-frequency noise performance of GaN based Schottky barriers. 148-152. Paper presented at 2001 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China.