Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs

Charles Surya; W. Wang; W. K. Fong; C. H. Chan; P. T. Lai

Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs

Charles Surya, W. Wang, W. K. Fong, C. H. Chan, P. T. Lai

Research output: Contribution to conference › Paper › peer-review

Abstract

Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO₂ interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO₂ interface.

Original language	English
Pages	59-62
Number of pages	4
Publication status	Published - Jan 1 1997
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia Duration: Nov 26 1996 → Nov 28 1996

Conference

Conference	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
City	Penang, Malaysia
Period	11/26/96 → 11/28/96

ASJC Scopus subject areas

Engineering(all)

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Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs. / Surya, Charles; Wang, W.; Fong, W. K.; Chan, C. H.; Lai, P. T.

1997. 59-62 Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .

Research output: Contribution to conference › Paper › peer-review

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abstract = "Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.",

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AU - Surya, Charles

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AU - Fong, W. K.

AU - Chan, C. H.

AU - Lai, P. T.

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N2 - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

AB - Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

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