Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs

W. Wang, Charles Surya, P. T. Lai

Research output: Contribution to conferencePaper

Abstract

Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.

Original languageEnglish
Pages98-101
Number of pages4
Publication statusPublished - Dec 1 1997
Externally publishedYes
EventProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: Aug 30 1997Aug 30 1997

Conference

ConferenceProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period8/30/978/30/97

ASJC Scopus subject areas

  • Engineering(all)

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    Wang, W., Surya, C., & Lai, P. T. (1997). Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs. 98-101. Paper presented at Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .