Abstract
Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
| Original language | English |
|---|---|
| Pages | 98-101 |
| Number of pages | 4 |
| Publication status | Published - Dec 1 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: Aug 30 1997 → Aug 30 1997 |
Conference
| Conference | Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting |
|---|---|
| City | Hong Kong, Hong Kong |
| Period | 8/30/97 → 8/30/97 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs. / Wang, W.; Surya, Charles; Lai, P. T.
1997. 98-101 Paper presented at Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting, Hong Kong, Hong Kong, .Research output: Contribution to conference › Paper
}
TY - CONF
T1 - Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs
AU - Wang, W.
AU - Surya, Charles
AU - Lai, P. T.
PY - 1997/12/1
Y1 - 1997/12/1
N2 - Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
AB - Low-frequency noise in n-channel MOSFETs was studied over a wide range of temperatures and biases. The devices were subjected to nitridation by annealing in NH3 and N2O which were subsequently gettered by low-energy Ar+ ranging from 10 minutes to 40 minutes. The noise spectra for devices with different gettering times are compared to the ungettered devices. It is found that, for both types of devices, flicker noise is reduced by backsurface gettering for short gettering times. The low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface.
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M3 - Paper
AN - SCOPUS:0031388418
SP - 98
EP - 101
ER -