Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors

D. K. Sengupta, W. Fang, J. I. Malin, A. P. Curtis, T. Horton, H. C. Kuo, D. Turnbull, C. H. Lin, J. Li, K. C. Hsieh, S. L. Chuang, I. Adesida, M. Feng, S. G. Bishop, G. E. Stillman, J. M. Gibson, H. Chen, J. Mazumder, H. C. Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO2 encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.

Original languageEnglish
Pages (from-to)43-51
Number of pages9
JournalJournal of Electronic Materials
Volume26
Issue number1
Publication statusPublished - Jan 1997
Externally publishedYes

Fingerprint

Quantum well infrared photodetectors
quantum well infrared photodetectors
Rapid thermal annealing
annealing
Detectors
Dark currents
Quantum efficiency
Semiconductor quantum wells
detectors
Wavelength
dark current
quantum efficiency
absorptivity
quantum wells
Experiments
Temperature
wavelengths

Keywords

  • Dark current characteristics
  • Multiple quantum well infrared photodectors (QWIPs)
  • Quantum efficiency
  • Rapid thermal annealing (RTA)
  • Red shift

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Sengupta, D. K., Fang, W., Malin, J. I., Curtis, A. P., Horton, T., Kuo, H. C., ... Liu, H. C. (1997). Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors. Journal of Electronic Materials, 26(1), 43-51.

Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors. / Sengupta, D. K.; Fang, W.; Malin, J. I.; Curtis, A. P.; Horton, T.; Kuo, H. C.; Turnbull, D.; Lin, C. H.; Li, J.; Hsieh, K. C.; Chuang, S. L.; Adesida, I.; Feng, M.; Bishop, S. G.; Stillman, G. E.; Gibson, J. M.; Chen, H.; Mazumder, J.; Liu, H. C.

In: Journal of Electronic Materials, Vol. 26, No. 1, 01.1997, p. 43-51.

Research output: Contribution to journalArticle

Sengupta, DK, Fang, W, Malin, JI, Curtis, AP, Horton, T, Kuo, HC, Turnbull, D, Lin, CH, Li, J, Hsieh, KC, Chuang, SL, Adesida, I, Feng, M, Bishop, SG, Stillman, GE, Gibson, JM, Chen, H, Mazumder, J & Liu, HC 1997, 'Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors', Journal of Electronic Materials, vol. 26, no. 1, pp. 43-51.
Sengupta DK, Fang W, Malin JI, Curtis AP, Horton T, Kuo HC et al. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors. Journal of Electronic Materials. 1997 Jan;26(1):43-51.
Sengupta, D. K. ; Fang, W. ; Malin, J. I. ; Curtis, A. P. ; Horton, T. ; Kuo, H. C. ; Turnbull, D. ; Lin, C. H. ; Li, J. ; Hsieh, K. C. ; Chuang, S. L. ; Adesida, I. ; Feng, M. ; Bishop, S. G. ; Stillman, G. E. ; Gibson, J. M. ; Chen, H. ; Mazumder, J. ; Liu, H. C. / Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 1. pp. 43-51.
@article{e7de99c23bae4b6a84256a8a50139633,
title = "Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors",
abstract = "The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO2 encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.",
keywords = "Dark current characteristics, Multiple quantum well infrared photodectors (QWIPs), Quantum efficiency, Rapid thermal annealing (RTA), Red shift",
author = "Sengupta, {D. K.} and W. Fang and Malin, {J. I.} and Curtis, {A. P.} and T. Horton and Kuo, {H. C.} and D. Turnbull and Lin, {C. H.} and J. Li and Hsieh, {K. C.} and Chuang, {S. L.} and I. Adesida and M. Feng and Bishop, {S. G.} and Stillman, {G. E.} and Gibson, {J. M.} and H. Chen and J. Mazumder and Liu, {H. C.}",
year = "1997",
month = "1",
language = "English",
volume = "26",
pages = "43--51",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors

AU - Sengupta, D. K.

AU - Fang, W.

AU - Malin, J. I.

AU - Curtis, A. P.

AU - Horton, T.

AU - Kuo, H. C.

AU - Turnbull, D.

AU - Lin, C. H.

AU - Li, J.

AU - Hsieh, K. C.

AU - Chuang, S. L.

AU - Adesida, I.

AU - Feng, M.

AU - Bishop, S. G.

AU - Stillman, G. E.

AU - Gibson, J. M.

AU - Chen, H.

AU - Mazumder, J.

AU - Liu, H. C.

PY - 1997/1

Y1 - 1997/1

N2 - The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO2 encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.

AB - The effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO2 encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.

KW - Dark current characteristics

KW - Multiple quantum well infrared photodectors (QWIPs)

KW - Quantum efficiency

KW - Rapid thermal annealing (RTA)

KW - Red shift

UR - http://www.scopus.com/inward/record.url?scp=5844413289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5844413289&partnerID=8YFLogxK

M3 - Article

VL - 26

SP - 43

EP - 51

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 1

ER -