Effects of reactive ion etching on phonon-electron interactions in InAlAs-InGaAs modulation-doped field-effect transistor structures studied by raman scattering

J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Raman Scattering by coupled longitudinal optic phonos and two-dimensional electron gas electrons in In0.52Al0.48 As-In0.53GFa0.47As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified for the first time in InGaAs-based systems. HBr-based reactive ion etching has been performed on these structures, and the effects have been correlated with etch time and bias voltage for structures with different cap layer thicknesses.

Original languageEnglish
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherMaterials Research Society
Pages377-382
Number of pages6
ISBN (Print)1558992251
Publication statusPublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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