Effects of reactive ion etching on the electrical properties of n-GaN surfaces

A. T. Ping, A. C. Schmitz, M. Asif Khan, I. Adesida

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Dry etch damage on n-Gan has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.

Original languageEnglish
Pages (from-to)769-773
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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