Abstract
Dry etch damage on n-Gan has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl4 plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of -150 V.
Original language | English |
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Pages (from-to) | 769-773 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 395 |
Publication status | Published - Jan 1 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering